Palladium Diffusion Transport in n-Type GaAs
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2007-03-15
著者
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CHANG Liann-Be
Department of Electronic Engineering and Green Technology Research Center, Chang Gung University
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Hsieh Li-zen
Department Of Electrical Engineering Chung-cheng Institute Of Technology National Defense University
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Chang L‐b
Chung Cheng Inst. Technol. Taoyuan Twn
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Chang Liann-be
Department Of Electronic Engineering Chang-gung University
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Chang Liann-be
Department Of Applied Physics Chung-cheng Institute Of Technology
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JENG Ming-Jer
Department of Electronic Engineering, St. John's & St. Mary's Institute of Technology
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Jeng Ming-jer
Department Of Electronic Engineering Chang-gung University
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Jeng Ming-jer
Department Of Electrical Engineering National Taiwan University
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Kuei Ping-yu
Department Of Electrical Engineering Chung-cheng Institute Of Technology National Defense University
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YEH Der-Hwa
Department of Electrical Engineering, Chung-Cheng Institute of Technology, National Defense Universi
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Yeh Der-hwa
Department Of Electrical Engineering Chung-cheng Institute Of Technology National Defense University
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- Gettering Properties in Praseodymium-Added Crystal Growth
- Improved Gate Leakage and Microwave Power Performance by Inserting A Thin Praseodymium Gate Metal Layer in AlGaAs/InGaAs Doped-Channel Field Effect Transistors
- Oxygen and Hydrogen Implanted Oxidation Enhancement of A1_Ga_As/A1_Ga_As Distributed Bragg Reflector Structure
- On the Reflectivity Spectrum of Implanted AlGaAs Distributed Bragg Reflector
- Palladium Diffusion Transport in n-Type GaAs
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