Gettering Properties in Praseodymium-Added Crystal Growth

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1998-03-15

著者

• CHANG Liann-Be

  Department of Electronic Engineering and Green Technology Research Center, Chang Gung University

• Wang Hung-thung

  Department Of Electrical Engineering Chung-cheng Institute Of Technology

• Chang L‐b

  Chung Cheng Inst. Technol. Taoyuan Twn

• Chang Liann-be

  Department Of Electronic Engineering Chang-gung University

• Chang Liann-be

  Department Of Applied Physics Chung-cheng Institute Of Technology

• CHENG Yi-Chang

  Department of Electrical Engineering, Chung Cheng Institute of Technology

• Cheng Yi-chang

  Department Of Electrical Engineering Chung Cheng Institute Of Technology

• Cheng Yi-chang

  Department Of Electronics Engineering Ming Hsin University Of Science And Technology

• Cheng Y‐c

  Ming‐hsin Inst. Technol. Hsin‐chu Twn

関連論文

• Improvement of External Quantum Efficiency in InGaN-Based Double-Heterostructure Light-Emitting Diodes
• Surface Passivation Using P_2S_5/(NH_4)_2S_x and Hydrogen Fluoride Solutions on Ag/n-InAs and Ag/n-InSb Schottky Diodes
• Barrier Height Enhancement of Ni/n-Type InP Schottky Contact Using a Thin Praseodymium Interlayer
• Gettering Properties in Praseodymium-Added Crystal Growth
• Improving RF CMOS Active Inductor by Simple Loss Compensation Network(Communication Devices/Circuits)
• A Novel RF CMOS Active Inductor(Communication Devices/Circuits)
• Improved Gate Leakage and Microwave Power Performance by Inserting A Thin Praseodymium Gate Metal Layer in AlGaAs/InGaAs Doped-Channel Field Effect Transistors
• Oxygen and Hydrogen Implanted Oxidation Enhancement of A1_Ga_As/A1_Ga_As Distributed Bragg Reflector Structure
• On the Reflectivity Spectrum of Implanted AlGaAs Distributed Bragg Reflector
• Palladium Diffusion Transport in n-Type GaAs
• Temperature Characteristics of High Modulation Rate Platinum-Diffused AlGaInP Resonant-Cavity Light-Emitting Diodes
• Barrier Height Enhancement of AlGaN/GaN Schottky Diodes by P_2S_5/(NH_4)_2S_x Surface Treatments
• Properties of Thermal Gadolinium Oxide Films on Silicon
• Effects of a Metal Film and Prism Dielectric on Properties of Surface Plasmon Resonance in a Multilayer System
• The Influence of Metal Film Thickness on Wave Properties of Surface Plasma Waves
• Near-Band-Edge Photoluminescence of Sulfur-Doped GaAs Prepared by Liquid Phase Epitaxy
• Impurity Gettering Effect in Pr_2O_3-Added InGaAs Liquid Phase Epitaxy
• Effective Suppression of Surface Recombination of AlGaInP Light-Emitting Diodes by Sulfur Passivation
• Study of the Fourier-Transform Infrared Spectra of InAs/GaAs Quantum Dot Superlattices for Far-Infrared Photodetectors
• High-Efficiency InGaN-Based Yellow-Green Light-Emitting Diodes
• Temperature Characteristics of High Modulation Rate Platinum-Diffused AlGaInP Resonant-Cavity Light-Emitting Diodes
• On the Reflectivity Spectrum of Implanted AlGaAs Distributed Bragg Reflector
• Improved Gate Leakage and Microwave Power Performance by Inserting A Thin Praseodymium Gate Metal Layer in AlGaAs/InGaAs Doped-Channel Field Effect Transistors
• Properties of Thermal Gadolinium Oxide Films on Silicon
• Etching Selectivity and Surface Profile of GaN in the Ni, SiO2 and Photoresist Masks Using an Inductively Coupled Plasma
• Kinetic Analysis of Antibody–Antigen Interactions using Phase-Detection-Based Surface Plasmon Resonance Sensor System
• Gettering Properties in Praseodymium-Added Crystal Growth
• Surface Passivation Using P2S5/(NH4)2Sx and Hydrogen Fluoride Solutions on Ag/n-InAs and Ag/n-InSb Schottky Diodes

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