A Novel RF CMOS Active Inductor(Communication Devices/Circuits)
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概要
- 論文の詳細を見る
A novel RF CMOS high Q-value active inductor is proposed in this work by using simple cascode RC feedback compensation technique. The performance of this active inductor has maximum Q-value about 1.2E6, inductance value from 3.5 nH to 4.5 nH and 3E-5Ω of minimum total equivalent loss, in the range of 1.2 GHz to 2 GHz.
- 社団法人電子情報通信学会の論文
- 2003-07-01
著者
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Lee Chen-Yi
Department of Electronics Engineering & Institute of Electronics, National Chiao-Tung University
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CHENG Yi-Chang
Department of Electrical Engineering, Chung Cheng Institute of Technology
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Cheng Yi-chang
Department Of Electrical Engineering Chung Cheng Institute Of Technology
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Cheng Yi-chang
Department Of Electronics Engineering Ming Hsin University Of Science And Technology
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Lee C‐y
Department Of Electronics Engineering And Institute Of Electronics National Chiao Tung University
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Cheng Y‐c
Ming‐hsin Inst. Technol. Hsin‐chu Twn
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YANG Jyh-Neng
Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University
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Yang Jyh-neng
Department Of Electronics Engineering And Institute Of Electronics National Chiao Tung University:de
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Yang Jyh-neng
Department Of Electronic Engineering Ming-hsin Institute Of Technology
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