Barrier Height Enhancement of AlGaN/GaN Schottky Diodes by P_2S_5/(NH_4)_2S_x Surface Treatments
スポンサーリンク
概要
- 論文の詳細を見る
- 2005-09-13
著者
-
Hsieh Li-zen
Department Of Electrical Engineering Chung-cheng Institute Of Technology National Defense University
-
Chang L‐b
Chung Cheng Inst. Technol. Taoyuan Twn
-
Chang Liann-be
Department Of Electronic Engineering Chang-gung University
-
Chang Liann-be
Department Of Applied Physics Chung-cheng Institute Of Technology
-
JENG Ming-Jer
Department of Electronic Engineering, St. John's & St. Mary's Institute of Technology
-
Jeng Ming-jer
Department Of Electronic Engineering Chang-gung University
-
Jeng Ming-jer
Department Of Electrical Engineering National Taiwan University
-
Kuei Ping-yu
Department Of Electrical Engineering Chung-cheng Institute Of Technology National Defense University
-
CHANG Liann-Bie
Department of Electronic Engineering, Chang-Gung University
-
CHANG Chia-Hwa
Department of Electrical Engineering, Chung Cheng Institute of Technology, National Defense Universi
-
Chang Chia-hwa
Department Of Electrical Engineering Chung Cheng Institute Of Technology National Defense University
関連論文
- Improvement of External Quantum Efficiency in InGaN-Based Double-Heterostructure Light-Emitting Diodes
- Surface Passivation Using P_2S_5/(NH_4)_2S_x and Hydrogen Fluoride Solutions on Ag/n-InAs and Ag/n-InSb Schottky Diodes
- Barrier Height Enhancement of Ni/n-Type InP Schottky Contact Using a Thin Praseodymium Interlayer
- Gettering Properties in Praseodymium-Added Crystal Growth
- Improved Gate Leakage and Microwave Power Performance by Inserting A Thin Praseodymium Gate Metal Layer in AlGaAs/InGaAs Doped-Channel Field Effect Transistors
- Oxygen and Hydrogen Implanted Oxidation Enhancement of A1_Ga_As/A1_Ga_As Distributed Bragg Reflector Structure
- On the Reflectivity Spectrum of Implanted AlGaAs Distributed Bragg Reflector
- Palladium Diffusion Transport in n-Type GaAs
- Temperature Characteristics of High Modulation Rate Platinum-Diffused AlGaInP Resonant-Cavity Light-Emitting Diodes
- Barrier Height Enhancement of AlGaN/GaN Schottky Diodes by P_2S_5/(NH_4)_2S_x Surface Treatments
- Properties of Thermal Gadolinium Oxide Films on Silicon
- Effects of a Metal Film and Prism Dielectric on Properties of Surface Plasmon Resonance in a Multilayer System
- The Influence of Metal Film Thickness on Wave Properties of Surface Plasma Waves
- Near-Band-Edge Photoluminescence of Sulfur-Doped GaAs Prepared by Liquid Phase Epitaxy
- Impurity Gettering Effect in Pr_2O_3-Added InGaAs Liquid Phase Epitaxy
- Rapid Thermal Post-Metallization Annealing in Thin Gate Oxides
- Influence of Polarization on the Efficiency of InxGa1-xN/GaN p–i–n Solar Cells
- Effective Suppression of Surface Recombination of AlGaInP Light-Emitting Diodes by Sulfur Passivation
- Study of the Fourier-Transform Infrared Spectra of InAs/GaAs Quantum Dot Superlattices for Far-Infrared Photodetectors
- Effect of Silicon Doping on Performance of 30-Pair InxGa1-xN/GaN Quantum Well Solar Cells
- High-Efficiency InGaN-Based Yellow-Green Light-Emitting Diodes
- Temperature Characteristics of High Modulation Rate Platinum-Diffused AlGaInP Resonant-Cavity Light-Emitting Diodes
- On the Reflectivity Spectrum of Implanted AlGaAs Distributed Bragg Reflector
- Improved Gate Leakage and Microwave Power Performance by Inserting A Thin Praseodymium Gate Metal Layer in AlGaAs/InGaAs Doped-Channel Field Effect Transistors
- The Comparisons between GaP Window Layers of Double-Heterojunction Light-Emitting Diodes using Various Dopants and Source Melts Regrown by Indium-Addition Liquid Phase Epitaxy
- Properties of Thermal Gadolinium Oxide Films on Silicon
- Etching Selectivity and Surface Profile of GaN in the Ni, SiO2 and Photoresist Masks Using an Inductively Coupled Plasma
- Kinetic Analysis of Antibody–Antigen Interactions using Phase-Detection-Based Surface Plasmon Resonance Sensor System
- Gettering Properties in Praseodymium-Added Crystal Growth
- Surface Passivation Using P2S5/(NH4)2Sx and Hydrogen Fluoride Solutions on Ag/n-InAs and Ag/n-InSb Schottky Diodes
- Growth Evolution of ZrO2 from Deposited Zr Metal during Thermal Oxidation