Comparison of InAs/GaAs Quantum Dot Infrared Photodetector and GaAs/(AlGa)As Superlattice Infrared Photodetector

スポンサーリンク

概要

• 論文の詳細を見る

• A 10-stacked InAs/GaAs quantum dot infrared photodetector (QDIP) is compared with a 20-period GaAs/(AlGa)As superlattice infrared photodetector (SLIP). The 2-10μm wide detection window and 187 mA/W high peak responsivity of InAs/GaAs QDIP at 7μm at an applied voltage of 1 . 1 V are superior to the 7-10μm detection window and 140 mA/W responsivity of GaAs/(AlGa)As SLIP at 9.4μm at an applied voltage of 1.3 V. The photocurrent of SLIP is temperature-independent, whereas the photocurrent of QDIP increases with increasing temperature from 20 to 100 K. The polarization-dependent response ratios of 0.22 and 0.39 are observed for SLIP and QDIP, respectively.

• 社団法人応用物理学会の論文
• 2001-12-01

著者

• Lee Si-chen

  Department Of Electrical Engineering & Graduate Institute Of Electronics Engineering National Ta

• Lin Shih-yen

  Department Of Electrical Engineering National Taiwan University

• TSAI Yao-Jen

  Department of Electrical Engineering, National Taiwan University

• Tsai Yao-jen

  Department Of Electrical Engineering National Taiwan University

関連論文

• Cavity mode in trilayer Ag/SiO_2/Au plasmonic thermal emitter
• Dispersion relations of localized surface plasmon polaritons in a plasmonic thermal emitter
• Coupling of surface plasmons between two silver films in a plasmonic thermal emitter
• Angle Position Detection Based on Amorphous Silicon Four Quadrant Orientation Detector
• Angle Position Detection Using a Novel Double Hollow Four Quadrant Orientation Detector for Application to Pattern Recognition
• Novel Low-Temperature Double Passivation Layer in Hydrogenated Amorphous Silicon Thin Film Transistors
• Novel Method for Monitoring the Surface Roughness during Molecular Beam Epitaxy
• High Gain Npn AlGaAs/GaAs Heterojunction Bipolar Transistors Prepared by Molecular Beam Epitaxy
• Comparison of InAs/GaAs Quantum Dot Infrared Photodetector and GaAs/(AlGa)As Superlattice Infrared Photodetector
• 100K Operated Photovoltaic InAs/GaAs Quantum-Dot Infrared Photodetector with Uniform Dot Density
• High-performance Multi-color InAs/AlGaAs Quantum Dot Infrared Photodetector
• In(Ga)As Quantum Rings for Terahertz Detectors
• The Improved Light-Induced Degradation and the Possible Mechanism in Deuterated Amorphous Silicon Alloy
• High-Performance Narrow-Bandwidth Multicolor InAs/AlGaAs/GaAs Quantum Dot Infrared Photodetector
• Effect of Silicon Dopant on the Performance of InAs/GaAs Quantum-Dot Infrared Photodetectors
• In(Ga)As Quantum Rings for Terahertz Detectors

もっと見る 閉じる

スポンサーリンク