High-Performance Narrow-Bandwidth Multicolor InAs/AlGaAs/GaAs Quantum Dot Infrared Photodetector
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概要
- 論文の詳細を見る
By introducing a 2 nm Al0.3Ga0.7As cap layer on InAs/GaAs quantum dots, a high-performance narrow-bandwidth multicolor quantum dot infrared photodetector (QDIP) with peak responses at 5.4, 9.5, and 15.8 μm was fabricated successfully. The highest peak responsivities reached 0.79, 0.47, and 0.63 A/W at a bias of $-1.2$ V. The two shorter-wavelength responses originating from two different-sized InAs quantum dots were due to the transitions of InAs quantum dots from the ground state to the GaAs conduction band. The separation of the two peaks was amplified by the insertion of the 2 nm AlGaAs cap layer. The longer-wavelength peak at 15.8 μm was due to the transition from the ground state to the first excited state followed by the tunneling out of small quantum dots. The increase in photocarrier lifetime by the barrier is proposed to explain the very high responsivity.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-08-15
著者
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Lee Si-chen
Department Of Electrical Engineering & Graduate Institute Of Electronics Engineering National Ta
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Chen Ying-Ying
Department of Electrical Engineering, Graduate Institute of Electronics Engineering, National Taiwan University, Taipei, Taiwan, Republic of China
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Chen Shen-De
Department of Electrical Engineering, Graduate Institute of Electronics Engineering, National Taiwan University, Taipei, Taiwan, Republic of China
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Lee Si-Chen
Department of Electrical Engineering, Graduate Institute of Electronics Engineering, National Taiwan University, Taipei, Taiwan, Republic of China
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