High Gain Npn AlGaAs/GaAs Heterojunction Bipolar Transistors Prepared by Molecular Beam Epitaxy
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概要
- 論文の詳細を見る
The bahavior of surface recombination current in AlGaAs/GaAs heterojunction bipolar transistors prepared by molecular beam epitaxy have been investigated. By using compositional grading of the emitter-base junction and emitter edge-thinning design, the 1-kT injection current can be increased whereas the surface recombination current is suppressed at the same time. Consequently, the maximum differential current gain reaches 4200 which, to our knowledge, is the highest reported to data for AlGaAs/GaAs heterojunction bipolar transistors prepared by molecular beam epitaxy.
- 社団法人応用物理学会の論文
- 1992-04-01
著者
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Lee Si-chen
Department Of Electrical Engineering & Graduate Institute Of Electronics Engineering National Ta
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Lin Hao-hsiung
Department Of Electrical Engineering National Taiwan University
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WU Chung-Chang
Department of Electrical Engineering, National Taiwan University
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Wu Chung-chang
Department Of Electrical Engineering National Taiwan University
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