Double-Band Anticrossing in GaAsSbN Induced by Nitrogen and Antimony Incorporation
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概要
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Photoreflectance spectroscopy is utilized to study the effect of dilute nitrogen and antimony on the electronic band structure of as-grown GaAs<inf>1-x-y</inf>Sb<inf>x</inf>N<inf>y</inf>alloys, which are potential materials for 1 eV solar cells and long-wavelength optoelectronic devices. The band gap, spin--orbit splitting, and valence-band maximum to the N-induced upward conduction-band transition, for the first time, are obtained and analyzed using the double-band anticrossing model. The E_{\text{N}} level with respect to the GaAs valence-band maximum and the interaction potential are determined as 1.540 and 2.839 eV, respectively. The results are helpful information for intermediate-band solar cell application.
- 2013-12-25
著者
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Hwang Jenn-shyong
Department Of Physics National Cheng Kung University
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Lin Hao-hsiung
Department Of Electrical Engineering National Taiwan University
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Lin Kuo-Lung
Department of Electrical Engineering, National Chung Hsing University, Taichung 40227, Taiwan
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Lin Kuang-I
Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan 70101, Taiwan
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Wang Bo-Wei
Department of Electrical Engineering, National Taiwan University, Taipei 10617, Taiwan
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Hwang Jenn-Shyong
Department of Physics, National Cheng Kung University, Tainan 70101, Taiwan
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- Double-Band Anticrossing in GaAsSbN Induced by Nitrogen and Antimony Incorporation
- Terahertz Radiation Mechanism of Native n-Type InN with Different Carrier Concentrations