Study of Self-Organized InAs/GaAs Quantum Dots by Photoluminescence and Photoreflectance
スポンサーリンク
概要
- 論文の詳細を見る
Using photoluminescence and photoreflectance ranging from 8 to 300 K, this study investigates transition energies in InAs/GaAs quantum dot (QD) samples grown on (100) misoriented 7° towards (110) GaAs substrates using gas source molecular beam epitaxy with various group V/III flux ratios. Only the exciton transition appears in the photoluminescence spectra (PL) of all samples. Experimental results indicate that the decrease in the full width at half maximum (FWHM) of the PL peak with increasing temperature can be attributed to the effective suppression of non-predominant size QD emissions due to carrier tunneling between nearby dots. Signals from all relevant portions of the samples have been observed in the PR spectra. One to three transition energies in QDs, depending on the dot size, are observed in the PR spectra.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-09-15
著者
-
Hwang Wen-chi
Department Of Physics National Cheng Kung University
-
Chen Mei-fei
Department Of Physics National Cheng Kung University
-
Hwang Jenn-shyong
Department Of Physics National Cheng Kung University
-
CHEN Ming-Ching
Electrical Engineering Department, National Taiwan University
-
Chou Wei-yang
Department Of Physics National Cheng Kung University
-
Tsai Chiang-nan
Department Of Physics National Cheng Kung University
-
Lin Hao-hsiung
Electrical Engineering Department National Taiwan University
-
Lin Kuang-i
Department Of Electrical Engineering National Chung Hsing University
-
Lin Hao-Hsiung
Electrical Engineering Department, National Taiwan University, Taipei, Taiwan
-
Tsai Chiang-Nan
Department of Physics, National Cheng Kung University, Tainan, Taiwan
-
Chou Wei-Yang
Department of Physics, National Cheng Kung University, Tainan, Taiwan
-
Hwang Wen-Chi
Department of Physics, National Cheng Kung University, Tainan, Taiwan
-
Chen Ming-Ching
Electrical Engineering Department, National Taiwan University, Taipei, Taiwan
-
Chen Mei-Fei
Department of Physics, National Cheng Kung University, Tainan, Taiwan
関連論文
- Surface Free Energy of Alloy Nitride Coatings Deposited Using Closed Field Unbalanced Magnetron Sputter Ion Plating
- Photoreflectance Studies of Ga_In_P/GaAs Heterostructures Grown by Metalorganic Chemical Vapor Deposition Technique
- Study of Self-Organized InAs/GaAs Quantum Dots by Photoluminescence and Photoreflectance
- A Novel Approach for the Fourier Transform of Photoreflectance Spectra(Condensed Matter : Electronic Structure, Electrical, Magnetic and Optical Properties)
- Photoluminescence and Photothermal Deflection Spectroscopy of InAs Quantum Dot Superlattices Grown on GaAs by Molecular Beam Epitaxy
- Application of Diamond-like Carbon Film to Phase-change Optical Recording Discs
- Terahertz Radiation Mechanism of Native n-Type InN with Different Carrier Concentrations
- Photoreflectance Study of InN Films with In and N Polarities
- Structural and Dielectric Characteristics of Calcium Strontium Magnesium Niobate
- Application of Diamond-like Carbon Film to Phase-change Optical Recording Discs
- Study of Self-Organized InAs/GaAs Quantum Dots by Photoluminescence and Photoreflectance
- Optical Transitions in a Self-Assembled Ge Quantum Dot/Si Superlattice Measured by Photoreflectance Spectroscopy
- Double-Band Anticrossing in GaAsSbN Induced by Nitrogen and Antimony Incorporation
- Terahertz Radiation Mechanism of Native n-Type InN with Different Carrier Concentrations