Terahertz Radiation Mechanism of Native n-Type InN with Different Carrier Concentrations
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概要
- 論文の詳細を見る
The polarity and mechanism of terahertz radiation from native n-type InN excited by femtosecond optical pulses are investigated. The optical properties, electron concentrations, and crystalline quality are characterized by photoluminescence and Raman scattering spectra. The electron concentrations are estimated to be between $0.35\times 10^{19}$ and $3.87\times 10^{19}$ cm-3. The polarity of terahertz radiation field from the samples with higher electron concentrations is opposite to that from p-InAs, indicating that the dominant radiation mechanism is the drift current. However, the samples with lower electron concentrations show the same polarity as p-InAs. Under this condition, the radiation mechanism is dominated by the photo-Dember effect.
- The Japan Society of Applied Physicsの論文
- 2010-10-25
著者
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Hwang Jenn-shyong
Department Of Physics National Cheng Kung University
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Tsai Chiang-nan
Department Of Physics National Cheng Kung University
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CHEN Meng-Chu
Institute of Nuclear Energy Research
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Gwo Shangjr
Department Of Physics National Tsing Hua University
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Lin Hon-way
Department Of Physics National Tsing Hua University
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Lee Ming-hsun
Department Of Physics National Cheng Kung University
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Tsai Jung-tse
Department Of Physics National Cheng Kung University
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Lin Kuang-i
Department Of Electrical Engineering National Chung Hsing University
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Gwo Shangjr
Department of Physics, National Tsing Hua University, Hsinchu, Taiwan 30013, R.O.C.
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Chen Meng-Chu
Institute of Nuclear Energy Research, Longtan, Taoyuan, Taiwan 325, R.O.C.
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Lin Hon-Way
Department of Physics, National Tsing Hua University, Hsinchu, Taiwan 30013, R.O.C.
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Lin Kuang-I
Department of Physics, National Cheng Kung University, Tainan, Taiwan 701, R.O.C.
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Hwang Jenn-Shyong
Department of Physics, National Cheng Kung University, Tainan, Taiwan 701, R.O.C.
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