Photoluminescence from InN Nanorod Arrays with a Critical Size
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概要
- 論文の詳細を見る
In this report, we investigated the rod size dependence of photoluminescence (PL) from vertically aligned indium nitride (InN) nanorod arrays grown on Si(111) substrates. Abnormal temperature dependence of the PL peak energy and the PL bandwidth was observed for InN nanorods with a critical diameter, which is of the same order of the surface electron accumulation layer ({\sim}20 nm). Exceptionally large activation energy of the nanorods with the critical diameter implies that holes within these narrow nanorods need to surpass the band bending energy near the surface in order to recombine with electrons accumulated in the surface layer.
- 2013-06-25
著者
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Gwo Shangjr
Department Of Physics National Tsing Hua University
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Liu Yu-Sheng
Department of Biological Sciences, East Tennessee State University
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Ahn Hyeyoung
Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu, Taiwan 30010, R.O.C.
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Chang Ke-Yang
Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan
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Gwo Shangjr
Department of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan
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Liu Yu-Sheng
Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan
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AHN Hyeyoung
Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University
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