Background and Photoexcited Carrier Dependence of Terahertz Radiation from Mg-Doped Nonpolar Indium Nitride Films
スポンサーリンク
概要
- 論文の詳細を見る
We report terahertz (THz) generation from Mg-doped nonpolar ($a$-plane) InN ($a$-InN:Mg). While the amplitude and polarity of the THz field from Mg-doped polar ($c$-plane) InN depend on the background carrier density, the p-polarized THz field from $a$-InN:Mg has background carrier-insensitive intensity and polarity, which can be attributed to carrier transport in a polarization-induced in-plane electric field. A small but apparent azimuthal angle dependence of the THz field from $a$-InN:Mg shows the additional contribution of the second-order nonlinear optical effect. Meanwhile, in this study, we did not observe the contribution of the intrinsic in-plane electric field which is significant for high stacking fault density nonpolar InN.
- 2010-12-25
著者
-
Gwo Shangjr
Department Of Physics National Tsing Hua University
-
Ahn Hyeyoung
Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu, Taiwan 30010, R.O.C.
-
Hong Yu-Liang
Department of Physics, National Tsing Hua University, Hsinchu, Taiwan 30013, R.O.C.
-
Gwo Shangjr
Department of Physics, National Tsing Hua University, Hsinchu, Taiwan 30013, R.O.C.
-
Yeh Yi-Jou
Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu, Taiwan 30010, R.O.C.
-
AHN Hyeyoung
Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University
関連論文
- Scanning Probe Microscopy and Lithography of Ultrathin Si_3N_4 Films Grown on Si(111) and Si(001)
- Terahertz Radiation Mechanism of Native n-Type InN with Different Carrier Concentrations
- Two-Dimensional Carrier Profiling by Kelvin-Probe Force Microscopy
- Background and Photoexcited Carrier Dependence of Terahertz Radiation from Mg-Doped Nonpolar Indium Nitride Films
- Photoreflectance Study of InN Films with In and N Polarities
- Experimental Determination of Electron Affinities for InN and GaN Polar Surfaces
- Photoluminescence from InN Nanorod Arrays with a Critical Size
- Terahertz Radiation Mechanism of Native n-Type InN with Different Carrier Concentrations