Photoreflectance Study of InN Films with In and N Polarities

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概要

• 論文の詳細を見る
• Japan Society of Applied Physicsの論文
• 2011-11-25

著者

• Hwang Jenn-shyong

  Department Of Physics National Cheng Kung University

• Lin Kuang-i

  Department Of Physics National Cheng Kung University

• Gwo Shangjr

  Department Of Physics National Tsing Hua University

• Tsai Jung-tse

  Department Of Physics National Cheng Kung University

• SU I-Cheng

  Department of Physics, National Cheng Kung University

• Lin Kuang-i

  Department Of Electrical Engineering National Chung Hsing University

• Su I-cheng

  Department Of Physics National Cheng Kung University

関連論文

• Surface Free Energy of Alloy Nitride Coatings Deposited Using Closed Field Unbalanced Magnetron Sputter Ion Plating
• Photoreflectance Studies of Ga_In_P/GaAs Heterostructures Grown by Metalorganic Chemical Vapor Deposition Technique
• A Novel Approach for the Fourier Transform of Photoreflectance Spectra(Condensed Matter : Electronic Structure, Electrical, Magnetic and Optical Properties)
• Scanning Probe Microscopy and Lithography of Ultrathin Si_3N_4 Films Grown on Si(111) and Si(001)
• Terahertz Radiation Mechanism of Native n-Type InN with Different Carrier Concentrations
• Two-Dimensional Carrier Profiling by Kelvin-Probe Force Microscopy
• Background and Photoexcited Carrier Dependence of Terahertz Radiation from Mg-Doped Nonpolar Indium Nitride Films
• Photoreflectance Study of InN Films with In and N Polarities
• Structural and Dielectric Characteristics of Calcium Strontium Magnesium Niobate
• Experimental Determination of Electron Affinities for InN and GaN Polar Surfaces
• Application of Diamond-like Carbon Film to Phase-change Optical Recording Discs
• Study of Self-Organized InAs/GaAs Quantum Dots by Photoluminescence and Photoreflectance
• Optical Transitions in a Self-Assembled Ge Quantum Dot/Si Superlattice Measured by Photoreflectance Spectroscopy
• Photoluminescence from InN Nanorod Arrays with a Critical Size
• Double-Band Anticrossing in GaAsSbN Induced by Nitrogen and Antimony Incorporation
• Terahertz Radiation Mechanism of Native n-Type InN with Different Carrier Concentrations

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