Two-Dimensional Carrier Profiling by Kelvin-Probe Force Microscopy
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概要
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This paper reports the two-dimensional (2-D) carrier/dopant profiling technique by Kelvin-probe force microscopy (KFM). Before surface potential was measured, a feedback control circuit was used to improve signal response speed. The effect of surface treatment on the contrast in surface potential images was studied. Then the correlation between surface potential difference measured by KFM and surface carrier/dopant concentration obtained by spreading resistance profiling, the capacitance–voltage method, and secondary ion mass spectroscopy analysis was established. On the basis of these results, the carrier depth profiling of a p–n junction and the detection of a p–n junction array with small pitch have been successfully demonstrated.
- 2008-06-25
著者
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Tsui Bing-yue
Department Of Electronics Engineering & Institute Of Electronics National Chiao Tung University
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Gwo Shangjr
Department Of Physics National Tsing Hua University
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Hsieh Chih-Ming
Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu 300, Taiwan, R.O.C.
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Hsieh Chih-Ming
Department of Electronics Engineering & Institute of Electronics, National Chiao-Tung University, 1001 Ta-Hsueh Road, Hsinchu 300, Taiwan, R.O.C.
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Su Po-Chih
Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu 300, Taiwan, R.O.C.
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Tzeng Shien-Der
Department of Physics, National Tsing-Hua University, Hsinchu 300, Taiwan, R.O.C.
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Gwo Shangjr
Department of Physics, National Tsing-Hua University, Hsinchu 300, Taiwan, R.O.C.
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