Thermal Stability of Nickel Silicide and Shallow Junction Electrical Characteristics with Carbon Ion Implantation

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概要

• 論文の詳細を見る

• In this work, we investigated the impact of carbon ion implantation on the thermal stability of nickel silicide film and nickel-silicide-contact n+/p shallow junctions. A higher carbon ion implantation dose can prevent the nickel silicide film from agglomeration and phase transformation. However, good thermal stability does not necessarily lead to excellent junction current–voltage characteristics owing to the diffusion of nickel atoms. When the carbon ion implantation dose increases to $5\times 10^{15}$ cm-2, many crystal defects are created. Then, numerous nickel atoms diffuse along these defects into the junction depletion region during the silicide formation process, resulting in poor junction characteristics. The trade-off between thermal stability and junction electrical characteristics is discussed in this paper. Finally, two methods are suggested to solve the serious leakage current problem.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2010-04-25

著者

• Tsui Bing-yue

  Department Of Electronics Engineering & Institute Of Electronics National Chiao Tung University

• Bing-Yue Tsui

  Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Room ED641, No. 1001, Ta-Hsueh Road, Hsinchu, Taiwan 30010, R.O.C.

• Lee Chen-Ming

  Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Room ED641, No. 1001, Ta-Hsueh Road, Hsinchu, Taiwan 30010, R.O.C.

• Chen-Ming Lee

  Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Room ED641, No. 1001, Ta-Hsueh Road, Hsinchu, Taiwan 30010, R.O.C.

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