Thermal Stability and Electrical Characteristics of Tungsten Nitride Gates in Metal–Oxide–Semiconductor Devices
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概要
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Tungsten nitride (WNx) was investigated to be used as a metal gate of metal–oxide–semiconductor field effect transistors (MOSFETs). WNx films with various N/W atomic ratios were deposited on SiO2 and HfO2 by reactive sputter deposition at different N2/Ar ratio flows. Nitrogen concentration in WNx films increases rapidly with the N2/Ar gas ratio and tends to saturate. WNx films with nitrogen atomic ratio higher than 44% have a main phase of WN, and the WN phase is stable up to 800 °C. The higher-order WNx phase does not form even if the nitrogen concentration is as high as 61%. Many of the excess nitrogen atoms in WNx films are desorbed at temperatures below 766 °C. The excess nitrogen in WNx films can cause effective work function lowering. A weak Fermi-level pinning effect is observed on the HfO2 film. In this case, WNx is not suitable to be metal gate of bulk p-channel MOSFETs. Fully depleted silicon-on-insulator (FD SOI) devices require a work function of 0.2 eV from the midgap of the Si energy band. Therefore, a WNx/HfO2 gate stack can be applied to p-channel FD SOI devices. The good integrity of the WNx/HfO2 gate stack also suggests that WNx is a promising gate material.
- 2008-02-25
著者
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Tsui Bing-yue
Department Of Electronics Engineering & Institute Of Electronics National Chiao Tung University
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Huang Chih-feng
Department Of Electronics Engineering & Institute Of Electronics National Chiao Tung University
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Tsui Bing-Yue
Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, ED630, No. 1001, Ta-Hsueh Road, Hsinchu 300, Taiwan, R.O.C.
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Lu Chih-Hsun
Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, ED630, No. 1001, Ta-Hsueh Road, Hsinchu 300, Taiwan, R.O.C.
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Huang Chih-Feng
Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, ED630, No. 1001, Ta-Hsueh Road, Hsinchu 300, Taiwan, R.O.C.
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