Investigation of NiSi Fully-Silicided Gate on SiO_2 and HfO_2 for Applications in Metal-Oxide-Semiconductor Field-Effect Transistors

スポンサーリンク

概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2006-07-15

著者

• TSUI Bing-Yue

  Department of Electronics Engineering and Institute of Electronics, National Chiao-Tung University

• Huang Chih-feng

  Department Of Electronics Engineering & Institute Of Electronics National Chiao Tung University

• Huang Chih-feng

  Department Of Electronics Engineering And Institute Of Electronics National Chiao Tung University

関連論文

• A New Method to Correct Capacitance of High-leakage Ultra-thin Gate Dielectric
• Threshold Voltage Instability in nMOSFETs with HfSiO/SiO_2 High-k Gate Stacks
• Investigation of NiSi Fully-Silicided Gate on SiO_2 and HfO_2 for Applications in Metal-Oxide-Semiconductor Field-Effect Transistors
• An Excellent Cu Diffusion Barrier for Next Generation Multi-level Cu-interconnect
• High-Performance Modified-Schottky-Barrier S/D p-Channel FinFETs
• Thermal Stability and Electrical Characteristics of Tungsten Nitride Gates in Metal–Oxide–Semiconductor Devices
• Investigation of NiSi Fully-Silicided Gate on SiO2 and HfO2 for Applications in Metal–Oxide–Semiconductor Field-Effect Transistors

スポンサーリンク