A New Method to Correct Capacitance of High-leakage Ultra-thin Gate Dielectric
スポンサーリンク
概要
- 論文の詳細を見る
- 2005-09-13
著者
-
Wu Wei-hao
Department Of Electronics Engineering National Chiao Tung University
-
Huang Yun-pei
Department Of Electronics Engineering And Institute Of Electronics National Chiao-tung University
-
TSUI Bing-Yue
Department of Electronics Engineering and Institute of Electronics, National Chiao-Tung University
-
HSIEH Feng-Chiu
Department of Electronics Engineering and Institute of Electronics, National Chiao-Tung University
-
Tsui Bing-yue
Department Of Electronics Engineering & Institute Of Electronics National Chiao Tung University
-
Tsui Bing-yue
Department Of Electronics Engineering And Institute Of Electronics National Chiao-tung University
-
Hsieh Feng-chiu
Department Of Electronics Engineering And Institute Of Electronics National Chiao-tung University
-
Wu Wei-hao
Department Of Electronics Engineering And Institute Of Electronics National Chiao-tung University
関連論文
- A New Method to Correct Capacitance of High-leakage Ultra-thin Gate Dielectric
- Threshold Voltage Instability in nMOSFETs with HfSiO/SiO_2 High-k Gate Stacks
- Physical and Barrier Properties of Plasma Enhanced Chemical Vapor Deposition α-SiC : N : H Films
- Investigation of NiSi Fully-Silicided Gate on SiO_2 and HfO_2 for Applications in Metal-Oxide-Semiconductor Field-Effect Transistors
- An Excellent Cu Diffusion Barrier for Next Generation Multi-level Cu-interconnect
- High-Performance Modified-Schottky-Barrier S/D p-Channel FinFETs
- Two-Dimensional Carrier Profiling by Kelvin-Probe Force Microscopy
- Effects of Base Oxide Thickness and Silicon Composition on Charge Trapping in HfSiO/SiO2 High-$k$ Gate Stacks
- Thermal Stability and Electrical Characteristics of Tungsten Nitride Gates in Metal–Oxide–Semiconductor Devices
- Nanoscale Multigate TiN Metal Nanocrystal Memory Using High-$k$ Blocking Dielectric and High-Work-Function Gate Electrode Integrated on Silcon-on-Insulator Substrate
- Investigation of NiSi Fully-Silicided Gate on SiO2 and HfO2 for Applications in Metal–Oxide–Semiconductor Field-Effect Transistors
- Thermal Stability of Nickel Silicide and Shallow Junction Electrical Characteristics with Carbon Ion Implantation
- Physical and Barrier Properties of Plasma Enhanced Chemical Vapor Deposition $\alpha$-SiC:N:H Films
- Formation of NiSi-Silicided p+n Shallow Junctions by BF2+ Implantation into/through Silicide and Rapid Thermal Annealing