Investigation of NiSi Fully-Silicided Gate on SiO2 and HfO2 for Applications in Metal–Oxide–Semiconductor Field-Effect Transistors
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概要
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Effective work function modulation ($\Phi_{\text{m,eff}}$) and the thermal/electrical stability of NiSi fully-silicided (FUSI) gates on SiO2 and HfO2 are investigated. A new method, implant-to-silicide, differing from the pre-doped method, is used to realize $\Phi_{\text{m,eff}}$ adjustments. The $\Phi_{\text{m,eff}}$ of NiSi FUSI gates on SiO2 can be tuned by incorporating BF2+ or P+ dopants after silicidation. Nevertheless, the Fermi-pinning effect was observed in the NiSi/HfO2 gate which limits the $\Phi_{\text{m,eff}}$ adjustment. A thin SiO2 interfacial layer can reduce the Fermi-pinning effect. A NiSi FUSI gate on SiO2 is thermally stable up to 600 °C. The thermal stress and impurity diffusion after a prolonged 600 °C annealing degraded the oxide integration. The temperature of the post-silicidation process should be as low as possible to lessen the thermal stress and impurity diffusion.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-07-15
著者
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Tsui Bing-yue
Department Of Electronics Engineering & Institute Of Electronics National Chiao Tung University
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Huang Chih-feng
Department Of Electronics Engineering & Institute Of Electronics National Chiao Tung University
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Tsui Bing-Yue
Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, No. 1001, Ta-Hsueh Road, Hsinchu 300, Taiwan, R.O.C.
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Huang Chih-Feng
Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, No. 1001, Ta-Hsueh Road, Hsinchu 300, Taiwan, R.O.C.
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