Huang Chih-feng | Department Of Electronics Engineering & Institute Of Electronics National Chiao Tung University
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概要
- HUANG Chih-Fengの詳細を見る
- 同名の論文著者
- Department Of Electronics Engineering & Institute Of Electronics National Chiao Tung Universityの論文著者
関連著者
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Huang Chih-feng
Department Of Electronics Engineering & Institute Of Electronics National Chiao Tung University
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Tsui Bing-yue
Department Of Electronics Engineering & Institute Of Electronics National Chiao Tung University
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TSUI Bing-Yue
Department of Electronics Engineering and Institute of Electronics, National Chiao-Tung University
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Huang Chih-feng
Department Of Electronics Engineering And Institute Of Electronics National Chiao Tung University
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LEE Chia-Jung
Department of Electronics Engineering & Institute of Electronics, National Chiao Tung University
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Lee Chia-jung
Department Of Electronics Engineering & Institute Of Electronics National Chiao Tung University
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Tsui Bing-Yue
Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, No. 1001, Ta-Hsueh Road, Hsinchu 300, Taiwan, R.O.C.
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Tsui Bing-Yue
Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, ED630, No. 1001, Ta-Hsueh Road, Hsinchu 300, Taiwan, R.O.C.
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Lu Chih-Hsun
Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, ED630, No. 1001, Ta-Hsueh Road, Hsinchu 300, Taiwan, R.O.C.
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Huang Chih-Feng
Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, No. 1001, Ta-Hsueh Road, Hsinchu 300, Taiwan, R.O.C.
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Huang Chih-Feng
Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, ED630, No. 1001, Ta-Hsueh Road, Hsinchu 300, Taiwan, R.O.C.
著作論文
- Investigation of NiSi Fully-Silicided Gate on SiO_2 and HfO_2 for Applications in Metal-Oxide-Semiconductor Field-Effect Transistors
- An Excellent Cu Diffusion Barrier for Next Generation Multi-level Cu-interconnect
- Thermal Stability and Electrical Characteristics of Tungsten Nitride Gates in Metal–Oxide–Semiconductor Devices
- Investigation of NiSi Fully-Silicided Gate on SiO2 and HfO2 for Applications in Metal–Oxide–Semiconductor Field-Effect Transistors