Evidence of Nitrogen Reorganization in GaAsSbN Alloys
スポンサーリンク
概要
著者
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Lin Hao-hsiung
Department Of Electrical Engineering National Taiwan University
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Hsu Hung-Pin
Department of Electronic Engineering, Ming Chi University of Technology, Taishan, Taipei 243, Taiwan
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Lin Yan-Ting
Department of Electrical Engineering, National Taiwan University, Taipei 106, Taiwan
関連論文
- Room-Temperature Photoreflectance Characterization of InAlAs /InGaAs Heterojunction Bipolar Transistor Structure Including Two-Dimensional Electron Gas
- High Gain Npn AlGaAs/GaAs Heterojunction Bipolar Transistors Prepared by Molecular Beam Epitaxy
- Novel GaAs Metal-Semiconductor Field-Effect Transistors with InGaP/GaAs Multiple Quantum Barrier Capping and Buffer Layers
- Evidence of Nitrogen Reorganization in GaAsSbN Alloys
- Photoreflectance Study on the Interface of InGaP/GaAs Heterostructures Grown by Gas Source Molecular Beam Epitaxy
- Double-Band Anticrossing in GaAsSbN Induced by Nitrogen and Antimony Incorporation