Room-Temperature Photoreflectance Characterization of InAlAs /InGaAs Heterojunction Bipolar Transistor Structure Including Two-Dimensional Electron Gas

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概要

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• Using contactless photoreflectance at 300 K we have characterized two InAlAs/InGaAs heterojunction bipolar transistor structures grown by molecular beam epitaxy. The spectra from the InAlAs and InGaAs interface can be accounted for on the basis of a triangular potential well which confined two-dimensional electron gas. A detailed lineshape fit makes it possible to evaluate the Fermi energy, and hence the two-dimensional electron gas concentration. Furthermore, other important parameters of the system, such as built-in electric fields and In composition, can be evaluated.

• 社団法人応用物理学会の論文
• 1994-05-15

著者

• Lin H‐h

  National Taiwan Univ. Taipei Twn

• Jan Gwo-jen

  Department Of Electrical Engineering National Taiwan University

• Hsu Kuo-tung

  Department Of Electrical Engineering National Taiwan University

• Lin Hao-hsiung

  Department Of Electrical Engineering National Taiwan University

• Chen Yau-huei

  Department Of Electrical Engineering National Taiwan University

• CHEN Kuo-Liang

  Department of Electrical Engineering, National Taiwan University

• Chen Kuo-liang

  Department Of Electrical Engineering National Taiwan University

関連論文

• Thermal Annealing Studies of Boron-Implanted HgCdTe by Electrolyte Electroreflectance
• Room-Temperature Photoreflectance Characterization of InAlAs /InGaAs Heterojunction Bipolar Transistor Structure Including Two-Dimensional Electron Gas
• High Gain Npn AlGaAs/GaAs Heterojunction Bipolar Transistors Prepared by Molecular Beam Epitaxy
• Novel GaAs Metal-Semiconductor Field-Effect Transistors with InGaP/GaAs Multiple Quantum Barrier Capping and Buffer Layers
• Evidence of Nitrogen Reorganization in GaAsSbN Alloys
• Photoreflectance Study on the Interface of InGaP/GaAs Heterostructures Grown by Gas Source Molecular Beam Epitaxy
• Simultaneous Measurement of Phase Retardation and Fast-Axis Angle of Phase Retardation Plate
• Double-Band Anticrossing in GaAsSbN Induced by Nitrogen and Antimony Incorporation

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