Novel GaAs Metal-Semiconductor Field-Effect Transistors with InGaP/GaAs Multiple Quantum Barrier Capping and Buffer Layers

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概要

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• We present a novel GaAs metal-semiconductor field-effect transistor (MESFET) with InGaP/GaAs multiple quantum barrier (MQB) capping and buffer layers. The MQB structure with (29; 6, 5, 7; 8, 8, 1; 6, 5, 7; 29) periodic stacks was designed to increase effective-potential-barrier height. We demonstrate that, by using the InGaP/GaAs MQB capping layer, the gate Schottky barrier performance and gate leakage current are improved.

• 社団法人応用物理学会の論文
• 2002-10-15

著者

• Lee Ching-ting

  Institute Of Electro-optical And Materials Science National Formosa University

• Lin Hao-hsiung

  Department Of Electrical Engineering National Taiwan University

• Lee Hsin-ying

  Institute Of Optical Sciences National Central University

• Lee Hsin-ying

  Institute Of Electro-optical And Materials Science National Formosa University

• Lee Hsin-ying

  Institute Of Biotechnology And Pharmaceutical Research National Health Research Institutes

• Lin Hao-Hsiung

  Department of Electrical Engineering, National Taiwan University

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