Photoluminescence Degradation and Passivation Mechanisms of Si Nanoclusters in Silicon Oxide Matrix

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概要

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• The Si nanoclusters embedded in a silicon oxide matrix were prepared using a laser-assisted chemical vapor deposition (LACVD) system. A degradation of photoluminescence (PL) by irradiating the sample with helium–cadmium (He–Cd) laser was observed. The dependence of PL degradation on long-term irradiation of He–Cd laser was investigated. We found that the He–Cd laser-induced breakage of Si–H-related bonds resulted in the formation of Si dangling bonds such as D centers and Pb centers, which are known to decrease PL intensity. The PL intensity of He–Cd laser-irradiated samples can be increased to that of as-deposited samples after exposing the samples to a H2 ambient at 400°C for 5 min. Post annealing in H2 could also help increase PL intensity by passivating the defect centers in as-deposited samples.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2005-06-15

著者

• Lee Ching-ting

  Institute Of Electro-optical And Materials Science National Formosa University

• Lin Chun-hung

  Institute Of Biological Chemistry Academia Sinica:genomics Research Center Academia Sinica:institute

• Lee Ching-Ting

  Institute of Microelectronics, Department of Electrical Engineering, Center for Micro-Nano Technology, National Cheng Kung University, Tainan, Taiwan, Republic of China

• Lin Chun-Hung

  Institute of Optical Sciences, National Central University, Chung-Li, Taiwan, Republic of China

• Tsai Tai-Cheng

  Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan, Taiwan, Republic of China

• Lee Tsung-Hsin

  Institute of Optical Sciences, National Central University, Chung-Li, Taiwan, Republic of China

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