Electronic Transport and Schottky Barrier Heights of Ni/Au Contacts on n-Type GaN Surface with and without a Thin Native Oxide Layer

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概要

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• Effects of a thin native oxide layer on Au/Ni/n-type GaN Schottky diodes were investigated in this study. The tunneling current was induced in the presence of native oxides on the GaN surface, making the thermionic emission (TE) theory inapplicable in this case. We find that the value of the barrier height (BH) calculated using the thermionic field emission (TFE) model is similar to that obtained by capacitance–voltage characteristics. This suggested that the discrepancy between BH according to the TFE and TE model for Au/Ni/n-type GaN Schottky diodes could be attributed to the presence of a native oxide layer at the Ni/n-type GaN interface and oxygen-induced and nitrogen-vacancy-related states on the GaN surfaces. Further, the characteristics of Schottky diodes improved when the n-type GaN was treated with (NH4)2Sx solution, an effective agent for removing native oxides and reducing surface states.

• 2006-04-15

著者

• Lee Ching-ting

  Institute Of Electro-optical And Materials Science National Formosa University

• Lin Yow-jon

  Institute Of Photonics National Changhua University Of Education

• Chang Hsing-Cheng

  Department of Automatic Control Engineering, Feng Chia University, 100, Wenhwa Road, Seatwen, Taichuang 40724, Taiwan, R.O.C.

• Lin Wen-Xiang

  Institute of Photonics, National Changhua University of Education, Changhua 500, Taiwan, Republic of China

• Lee Ching-Ting

  Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, Tainan 701, Taiwan, Republic of China

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