Optical Properties of Heavily Mg-Doped p-GaN Films Prepared by Reactive Ion Etching

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概要

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• The effect of the damage caused by reactive ion etching on the optical properties of heavily Mg-doped p-type GaN (p-GaN) was investigated in this study. After etching, we found that the blue luminescence (BL) is redshifted and the intensity of the redshifted BL is markedly increased at room temperature, which are attributed to the formation of the lattice disorder resulting in the domination of distant donor–acceptor pairs (DAPs) and the formation of more nitrogen-vacancy-related defects resulting in more recombination centers D responsible for DAP transition.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2006-01-15

著者

• Liu Day-shan

  Institute Of Electro-optical And Materials Science National Formosa University

• Chien Feng-tso

  Department Of Electronic Engineering Feng Chia University

• Lin Yow-jon

  Institute Of Photonics National Changhua University Of Education

• Liu Day-Shan

  Institute of Electro-Optical and Materials Science, National Formosa University, Huwei 632, Taiwan, Republic of China

• Chu Yow-Lin

  Institute of Photonics, National Changhua University of Education, Changhua 500, Taiwan, Republic of China

• Lee Chi-Sen

  Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 106, Taiwan, Republic of China

• Lee Chi-Sen

  Graduate Institute of Electronic Engineering and Department of Electrical Engineering, National Taiwan University, Taipei, Taiwan, Republic of China

• Chien Feng-Tso

  Department of Electronic Engineering, Feng Chia University, Taichung 407, Taiwan, Republic of China

• Lin Yow-Jon

  Institute of Optical Sciences, National Central University

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