Zinc Oxide-Based Schottky Diode Prepared Using Radio-Frequency Magnetron Cosputtering System

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概要

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• The rectifying property of a zinc oxide (ZnO)-based Schottky diode prepared using a radio-frequency (rf) magnetron cosputtering system was improved by enhancing the cosputtered ZnO crystal quality, thereby optimizing the ohmic contact resistance and compensating the Schottky contact surface states. An undoped ZnO layer with a high $c$-axis orientation and a low internal residual stress was achieved using a postannealing treatment. A homogeneous n-type ZnO–indium tin oxide (ITO) cosputtered film was deposited onto the undoped ZnO layer to optimize the ohmic contact behavior to the Al electrode. The Schottky contact surface of the undoped ZnO layer to the Ni/Au electrode was passivated using an oxygen plasma treatment. Owing to the compensation of the native oxygen vacancies (VO) on the undoped ZnO surface, the leakage current markedly decreased and subsequently led to a quality Schottky diode performance with an ideality factor of 1.23 and a Schottky barrier height of 0.82 eV.

• 2010-08-25

著者

• Liu Day-shan

  Institute Of Electro-optical And Materials Science National Formosa University

• Lee Ching-ting

  Institute Of Electro-optical And Materials Science National Formosa University

• Liu Day-Shan

  Institute of Electro-Optical and Materials Science, National Formosa University, Huwei 63201, Taiwan

• Lai Bo-Ting

  Institute of Electro-Optical and Materials Science, National Formosa University, Huwei 63201, Taiwan

• Hong Jhen-Dong

  Institute of Electro-Optical and Materials Science, National Formosa University, Huwei 63201, Taiwan

• Yao Shiau-Lu

  Institute of Electro-Optical and Materials Science, National Formosa University, Huwei 63201, Taiwan

• Lee Ching-Ting

  Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan

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