InAs/InGaAs/GaAs Coupled Quantum Dot Laser with Predeposited InAs Seed Layer
スポンサーリンク
概要
- 論文の詳細を見る
We report a coupled quantum dot (QD) structure for long wavelength laser applications. The structure comprises an InAs seed layer and a second InAs QD layer capped with an In0.33Ga0.67As capping layer. Cross-sectional transmission electron microscopy (TEM) images show a vertical alignment between the QD stacks, which causes the coupled QD sample to have a larger dot size and a lower dot density than the control sample. The laser with the coupled QD structure exhibits a markedly longer emission wavelength and a slightly higher threshold current density than lasers with a conventional QD structure, indicating that the coupled QD structure has potential for long wavelength applications.
- 2006-08-15
著者
-
Liu Day-shan
Institute Of Electro-optical And Materials Science National Formosa University
-
Lin Hao-Hsiung
Graduate Institute of Electronic Engineering and Department of Electrical Engineering, National Taiwan University, Taipei, Taiwan, Republic of China
-
Liu Day-Shan
Institute of Electro-Optical and Materials Science, National Formosa University, Huwei, Taiwan, Republic of China
-
Lee Chi-Sen
Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 106, Taiwan, Republic of China
-
Chang Fu-Yu
Graduate Institute of Electronic Engineering and Department of Electrical Engineering, National Taiwan University, Taipei, Taiwan, Republic of China
-
Lee Chi-Sen
Graduate Institute of Electronic Engineering and Department of Electrical Engineering, National Taiwan University, Taipei, Taiwan, Republic of China
関連論文
- Activation of Nitrogen-acceptors in Al-N Codoped Zinc Oxide Films Prepared by Radio Frequency Magnetron Cosputtering Technology
- Effect of Oxygen Contents on the Property of Hydrophobic Thin Films Deposited on Flexible Substrates Using Plasma-enhanced CVD
- A Piezoelectric ZnO Film Prepared by RF Magnetron Sputtering
- Properties of Zinc Oxide Films Cosputtered with Various Aluminum Contents at Room Temperature
- Electrical, Optical and Structure Properties of ITO Films Cosputtered with ZnO
- A Transparent and Conductive Film Prepared by RF Magnetron Cosputtering System at Room Temperature
- Study of the Improved conductivity of Indium-tin Oxide Films Cosputtered with Zinc Oxide at Room Temperature from Thermal Degradations
- InAs/InGaAs/GaAs Coupled Quantum Dot Laser with Predeposited InAs Seed Layer
- Zinc Oxide-Based Schottky Diode Prepared Using Radio-Frequency Magnetron Cosputtering System
- Properties of Zinc Oxide Films Cosputtered with Aluminum at Room Temperature
- The Preparation of Piezoelectric ZnO Films by RF Magnetron Sputtering for Layered Surface Acoustic Wave Device Applications
- Band Gap Reduction in InAsN Alloys
- Optical Properties of Heavily Mg-Doped p-GaN Films Prepared by Reactive Ion Etching
- Electrical, Optical and Material Properties of ZnO-Doped Indium–Tin Oxide Films Prepared Using Radio Frequency Magnetron Cosputtering System at Room Temperature