Band Gap Reduction in InAsN Alloys

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概要

• 論文の詳細を見る

• We report the structural, electrical and optical properties of bulk InAsN alloy with various nitrogen contents deposited on (100) InP substrates using plasma-assisted gas-source molecular beam epitaxy. From absorption measurements, it is found that the fundamental absorption energy of InAsN is higher than that of InAs due to the Burstein–Moss effect resulting from the high residual carrier concentration in InAsN. To deduce the 'real' band-gap energy of InAsN samples, the energy shift due to the Burstein–Moss effect and the band-gap narrowing effect are calculated by using a self-consistent approach based on the band-anticrossing (BAC) model [Shan et al.: Phys. Rev. Lett. 82 (1999) 1221]. After correction, the 'real' band-gap energy of InAsN samples decreases as N increases. The electron effective mass of InAsN is also investigated by plasma-edge measurement. We found a sizeable increase of the electron effective mass in these InAsN alloys, which is consistent with the theoretical predictions based on the BAC model.

• Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
• 2003-02-15

著者

• Sung Li-wei

  Graduate Institute Of Electronics Engineering National Taiwan University

• Chu Tso-yu

  Graduate Institute Of Electronics Engineering National Taiwan University

• Lin Hao-Hsiung

  Graduate Institute of Electronics Engineering, National Taiwan University, Taipei, Taiwan, R.O.C.

• Lin Hao-Hsiung

  Graduate Institute of Electronic Engineering and Department of Electrical Engineering, National Taiwan University, Taipei, Taiwan, Republic of China

• Shih Ding-Kang

  Graduate Institute of Electronics Engineering, National Taiwan University, Taipei, Taiwan, R.O.C.

• Yang T.-R.

  Department of Physics, National Taiwan Normal University, Taipei, Taiwan, R.O.C.

• Chu Tso-Yu

  Graduate Institute of Electronics Engineering, National Taiwan University, Taipei, Taiwan, R.O.C.

• Sung Li-Wei

  Graduate Institute of Electronics Engineering, National Taiwan University, Taipei, Taiwan, R.O.C.

関連論文

• InAs/InGaAs/GaAs Coupled Quantum Dot Laser with Predeposited InAs Seed Layer
• Band Gap Reduction in InAsN Alloys

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