Electrical, Optical and Material Properties of ZnO-Doped Indium–Tin Oxide Films Prepared Using Radio Frequency Magnetron Cosputtering System at Room Temperature
スポンサーリンク
概要
- 論文の詳細を見る
The relationship between the electrical, optical and material properties of transparent and conductive oxide films prepared by rf cosputtering indium–tin oxide (ITO) and zinc oxide (ZnO) targets has been investigated. The evolution from polycrystalline structure of an undoped ITO film to an amorphous-like ZnkIn2O3+k structure obtained from ZnO-doped ITO films is found to be responsible for the marked improvement in the electrical properties. A low surface roughness is also achieved from this amorphous structure. However, both electrical property and surface uniformity begin to degrade with increasing rf cosputtering power on the ZnO target that corresponds to a high atomic ratio of $\text{Zn}/(\text{Zn} + \text{In})$. The degradation mechanism is attributed to the appearance of a microcrystalline ZnO structure that is detrimental to the film resistivity. Furthermore, optical band gap calculated from the absorption edge of such cosputtered films also decreases with increasing ZnO impurities.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-04-30
著者
-
Liu Day-shan
Institute Of Electro-optical And Materials Science National Formosa University
-
Wu Chun-ching
Institute Of Electro-optical And Materials Science National Formosa University
-
Huang Bing-wen
Institute Of Electro-optical And Materials Science National Formosa University
-
Lin Chun-hsing
Institute Of Electro-optical And Materials Science National Formosa University
-
Huang Bing-Wen
Institute of Electro-Optical and Materials Science, National Formosa University, Huwei, Taiwan 63201, Republic of China
-
Wu Chun-Ching
Institute of Electro-Optical and Materials Science, National Formosa University, Huwei, Taiwan 63201, Republic of China
-
Lin Chun-Hsing
Institute of Electro-Optical and Materials Science, National Formosa University, Huwei, Taiwan 63201, Republic of China
関連論文
- Activation of Nitrogen-acceptors in Al-N Codoped Zinc Oxide Films Prepared by Radio Frequency Magnetron Cosputtering Technology
- Effect of Oxygen Contents on the Property of Hydrophobic Thin Films Deposited on Flexible Substrates Using Plasma-enhanced CVD
- A Piezoelectric ZnO Film Prepared by RF Magnetron Sputtering
- Properties of Zinc Oxide Films Cosputtered with Various Aluminum Contents at Room Temperature
- Electrical, Optical and Structure Properties of ITO Films Cosputtered with ZnO
- A Transparent and Conductive Film Prepared by RF Magnetron Cosputtering System at Room Temperature
- Study of the Improved conductivity of Indium-tin Oxide Films Cosputtered with Zinc Oxide at Room Temperature from Thermal Degradations
- InAs/InGaAs/GaAs Coupled Quantum Dot Laser with Predeposited InAs Seed Layer
- Zinc Oxide-Based Schottky Diode Prepared Using Radio-Frequency Magnetron Cosputtering System
- Properties of Zinc Oxide Films Cosputtered with Aluminum at Room Temperature
- The Preparation of Piezoelectric ZnO Films by RF Magnetron Sputtering for Layered Surface Acoustic Wave Device Applications
- Optical Properties of Heavily Mg-Doped p-GaN Films Prepared by Reactive Ion Etching
- Electrical, Optical and Material Properties of ZnO-Doped Indium–Tin Oxide Films Prepared Using Radio Frequency Magnetron Cosputtering System at Room Temperature