Nonalloyed Ohmic Formation for p-Type AlGaN with p-Type GaN Capping Layers Using Ohmic Recessed Technique

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概要

• 論文の詳細を見る
• Japan Society of Applied Physicsの論文
• 2006-01-25

著者

• LIN Yow-Jon

  Institute of Photonics, National Changhua University of Education

• Lin Yow-jon

  Institute Of Photonics National Changhua University Of Education

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• Nonalloyed Ohmic Formation for p-Type AlGaN with p-Type GaN Capping Layers Using Ohmic Recessed Technique
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• Optical Properties of Heavily Mg-Doped p-GaN Films Prepared by Reactive Ion Etching
• Improvement of Ni Nonalloyed Ohmic Contacts on p-GaN Films by Changing Thickness of p-InGaN Capping Layers

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