Improvement of Ni Nonalloyed Ohmic Contacts on p-GaN Films by Changing Thickness of p-InGaN Capping Layers

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概要

• 論文の詳細を見る

• The influence of the thickness of p-type InGaN (p-InGaN) capping layers grown on p-type GaN (p-GaN) on the electrical properties of Ni contacts on p-GaN was investigated in this study. Experiments and simulations indicated that a thicker p-InGaN capping layer grown on p-GaN led to the formation of a higher concentration of a two-dimensional hole gas (2DHG) at the interfaces. In addition, owing to a low barrier at the interfaces, holes can be easily injected into the p-GaN layer through recessed channels and a 2DHG channel, resulting in the formation of nonalloyed ohmic contacts with a low specific contact resistance of $1.7\times 10^{-5}$ $\Omega$ cm2.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2006-09-15

著者

• Lin Yow-jon

  Institute Of Photonics National Changhua University Of Education

• Chen Wei-li

  Department Of Clinical Pharmacology Zhong Shan Hospital Fudan University

• Chu Yow-Lin

  Institute of Photonics, National Changhua University of Education, Changhua 500, Taiwan, Republic of China

• Lin Yow-Jon

  Institute of Photonics, National Changhua University of Education, Changhua 500, Taiwan, Republic of China

• Ho Cheng-Hsiang

  Department of Electronic Engineering, National Changhua University of Education, Changhua 500, Taiwan, Republic of China

• Lin Yow-Jon

  Institute of Optical Sciences, National Central University

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