Effect of Silicon Dopant on the Performance of InAs/GaAs Quantum-Dot Infrared Photodetectors
スポンサーリンク
概要
- 論文の詳細を見る
Ten-stacked self-assembled InAs/GaAs quantum-dot infrared photodetectors (QDIP) with and without silicon dopant in the InAs quantum-dot structure are investigated. Higher responsivity is observed for doped QDIP due to its higher electron occupancy at the ground state. Photovoltaic response, asymmetric photocurrent and higher activation energy for doped QDIP are attributed to the built-in electrical field and higher impurity scattering for dark current that resulted from the creation of a slightly asymmetric potential profile in doped QDIP by the ionized donor source in the wetting layer.
- Japan Society of Applied Physicsの論文
- 2004-02-01
著者
-
Lee Si-chen
Department Of Electrical Engineering & Graduate Institute Of Electronics Engineering National Ta
-
Tsai Yao-jen
Department Of Electrical Engineering National Taiwan University
-
Lin Shih-Yen
Opto-Electronics & Systems Laboratories, Industrial Technology Research Institute, Hsinchu, Taiwan, Republic of China
-
Lee Si-Chen
Department of Electrical Engineering, National Taiwan University, Taipei, Taiwan, Republic of China
-
Tsai Yao-Jen
Department of Electrical Engineering, National Taiwan University, Taipei, Taiwan, Republic of China
関連論文
- Cavity mode in trilayer Ag/SiO_2/Au plasmonic thermal emitter
- Dispersion relations of localized surface plasmon polaritons in a plasmonic thermal emitter
- Coupling of surface plasmons between two silver films in a plasmonic thermal emitter
- Angle Position Detection Based on Amorphous Silicon Four Quadrant Orientation Detector
- Angle Position Detection Using a Novel Double Hollow Four Quadrant Orientation Detector for Application to Pattern Recognition
- Novel Low-Temperature Double Passivation Layer in Hydrogenated Amorphous Silicon Thin Film Transistors
- Novel Method for Monitoring the Surface Roughness during Molecular Beam Epitaxy
- High Gain Npn AlGaAs/GaAs Heterojunction Bipolar Transistors Prepared by Molecular Beam Epitaxy
- Comparison of InAs/GaAs Quantum Dot Infrared Photodetector and GaAs/(AlGa)As Superlattice Infrared Photodetector
- 100K Operated Photovoltaic InAs/GaAs Quantum-Dot Infrared Photodetector with Uniform Dot Density
- High-performance Multi-color InAs/AlGaAs Quantum Dot Infrared Photodetector
- In(Ga)As Quantum Rings for Terahertz Detectors
- The Improved Light-Induced Degradation and the Possible Mechanism in Deuterated Amorphous Silicon Alloy
- High-Performance Narrow-Bandwidth Multicolor InAs/AlGaAs/GaAs Quantum Dot Infrared Photodetector
- Effect of Silicon Dopant on the Performance of InAs/GaAs Quantum-Dot Infrared Photodetectors
- In(Ga)As Quantum Rings for Terahertz Detectors