The GaN based HEMT and Schottky diode with filed plate technology for DC/DC converter

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概要

• 論文の詳細を見る
• 2006-09-13

著者

• Chan Yi-jen

  Department Of Electrical Engineering National Central University

• Lin Ching-huao

  Department Of Electrical Engineering National Central University

• Wang Wen-kai

  Department Of Electrical Engineering National Central University

• LIN Cheng-Kuo

  Department of Electrical Engineering, National Central University

• CHANG Yu-Jung

  Department of Electrical Engineering, National Central University

• Chang Yu-jung

  Department Of Electrical Engineering National Central University

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• The low-k BCB passivation layer on the GaN HEMTs
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• High Power Density and Large Voltage Swing of Enhancement-Mode Al_Ga_As/InGaAs Pseudomorphic High Electron Mobility Transistor for 3.5 V L-Band Applications
• The GaN based HEMT and Schottky diode with filed plate technology for DC/DC converter
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