Simple Analytical Model of CMOS Transimpedance Amplifier to Enhance Operational Bandwidth(Lasers, Quantum Electronics)

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概要

• 論文の詳細を見る

• This article presents the CMOS transimpedance amplifier (TIA) for gigabits optical communication, where an analytical method for designing a wideband TIA using different inductive peaking technology is introduced [1]-[3]. In this study, we derive and analyze the transfer function (V_<out>/I_<in>) of the TIA circuit from the equivalent circuit model. By adding the peaking inductor in different locations, the TIA 3-dB bandwidth can be enhanced without sacrificing the transimpedance gain. These TIA designs have been realized by the advanced CMOS process, and the measured results confirm the predictions from the analytic approach, where the inductive peaking is an useful way to enhance the TIA bandwidth.

• 一般社団法人電子情報通信学会の論文
• 2004-06-01

著者

• CHAN Yi-Jen

  the Department of Electrical Engineering, National Central University

• Chan Y‐j

  Dept. Of Electrical Engineering National Central University

• Kuo Chin-wei

  Department Of Electrical Engineering National Central University

• KUO Chin-Wei

  the Department of Electrical Engineering, National Central University

• HO Chien-Chih

  the Department of Electrical Engineering, National Central University

• HSIAO Chao-Chih

  the Department of Electrical Engineering, National Central University

• Hsiao Chao-chih

  The Department Of Electrical Engineering National Central University

• Kuo Chin-wei

  The Department Of Electrical Engineering National Central University

• Ho Chien-chih

  The Department Of Electrical Engineering National Central University

• Chan Yi-jen

  The Department Of Electrical Engineering National Central University

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• Simple Analytical Model of CMOS Transimpedance Amplifier to Enhance Operational Bandwidth(Lasers, Quantum Electronics)

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