CHANG Chun-Yen | Department of Electronics Engineering, National Chiao Tung University

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概要

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著作論文

A New Method to Extract MOSFET Threshold Voltage, Effective Channel Length, and Channel Mobility Using S-parameter Measurement(Active Devices and Circuits)(Advances in Characterization and Measurement Technologies for Microwave and Millim
Analysis of Temperature Effects on the High-Frequency Characteristics of RF LDMOS Transistors
Characterization of RF LDMOS Transistors with Different Layout Structures
Degradation of Low-Frequency Noise in Partially Depleted Silicon-on-Insulator Metal Oxide Semiconductor Field-Effect Transistors by Hot-Carrier Stress
Degradation of Low-Frequency Noise in PD SOI MOSFETs after Hot-Carrier Stress
Low-Frequency Noise in Partially Depleted SOI MOSFETs Operating from Linear Region to Saturation Region at Various Temperatures
A High-Power-Density and High-Efficiency Atomic-Planar-Doped AlGaAs/InGaAs Quantum-Well HEMT for 2.4V Medium-Power Wireless Communication Applications
The Impact of Mixed-mode Electrical Stress on High-Frequency and RF Power Characteristics of SiGe HBTs
The Effects of Shallow Germanium Halo Doping on N-Channel Metal Oxide Semiconductor Field Effect Transistors
Noise Parameters Computation of Microwave Devices Using Genetic Algorithms(Active Circuits & Antenna, Recent Technologies of Microwave and Millimeter-Wave Devices Focusing on Miniaturization and Advancement in Performance with Their Appli
A Novel Approach for Parameter Determination of HBT Small-Signal Equivalent Circuit(Model, Analog Circuit and Device Technologies)
CMOS RFIC : Application to Wireless Transceiver Design (Special Issue on Low-Power High-Speed CMOS LSI Technologies)
P-Channel Metal Oxide Semiconductor Field Effect Transistors with Polycrystalline-Si_Ge_x Gate Grown by Ultra-High Vacuum Chemical Vapor Deposition System
Very High Hole Mobility in P-Type Si/SiGe Modulation-Doped Heterostructures
Characterization of Polycrystalline Silicon Thin Film Transistors Fabricated by Ultrahigh-Vacuum Chemical Vapor Deposition and Chemical Mechanical Polishing
Combination of Chemical Mechanical Polishing and Ultrahigh Vacuum Chemical Vapor Deposition Techniques to Fabricate Polycrystalline Thin Film Transistors
Dual-Band Mixer Design(RF, Analog Circuit and Device Technologies)
Characterization of Improved AlGaAs/GaAs Resonant Tunneling Heterostructure Bipolar Transistors
A CMOS Low-Noise Amplifier for Ultra Wideband Wireless Applications(Wide Band Systems)
Interfacial Abruptness in Si/SiGe Heteroepitaxy Grown by Ultrahigh Vacuum Chemical Vapor Deposition
Electrical Properties of Multiple High-Dose Si Implantation in p-GaN
Epitaxial Growth of the GaN Film by Remote-Plasma Metalorganic Chemical Vapor Deposition
Influence of Metalorganic Sources on the Composition Uniformity of Selectively Grown Ga_XIn_P
Low-Voltage-Operation High-Power-Density AlGaAs/InGaAs Enhancement-Mode Pseudomorphic High-Electron-Mobility Transistor for Personal Handy-Phone Handset Application : Semiconductors
Characterization and Reliability of Lightly-Doped-Drain Polysilicon Thin-Film Transistors with Oxide Sidewall Spacer Formed by One-Step Selective Liquid Phase Deposition
Dimensional Effects on the Drain Current of N-and P-Channel Polycrystalline Silicon Thin Film Transistors
Excellent Au/Ge/Pd Ohmic Contacts to n-type GaAs Using Mo/Ti as the Diffusion Barrier
High-Performance Au/Ti/Ge/Pd Ohmic Contacts on n-Type In_Ga_P
Growth of ZnSe Epilayer on Si Using Ge/Ge_xSi_ Buffer Structure
Effects of O_2- and N_2O-Plasma Treatments on Properties of Plasma-Enhanced-Chemical-Vapor-Deposition Tetraethylorthosilicate Oxide
Comparison of N_2 and NH_3 Plasma Passivation Effects on Polycrystalline Silicon Thin-Film Transistors
Optimization of Short Channel Effect With Arsenic Halo Implant through Polysilicon Gate : Semiconductors
Shallow-Trench Isolation With Raised-Field-Oxide Structure
The Elimination of Inversion Domains in MBE-GaN Grown Using Low Temperature Nitridation
Growth of GaN on Si (111) using simultaneous AlN/α-Si_3N_4 buffer structure
Systematical Study of Reliability Issues in Plasma-Nitrided and Thermally Nitrided Oxides for Advanced Dual-Gate Oxide p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors
A method for suppressing deep-level emission in ZnSe/Ge/Ge_xSi_/Si structure
Composite-Channel Metamorphic High Electron Mobility Transistor for Low-Noise and High-Linearity Applications
New Nanometer T-Gate Fabricated by Thermally Reflowed Resist Technique : Instrumentation, Measurement, and Fabrication Technology

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