P-Channel Metal Oxide Semiconductor Field Effect Transistors with Polycrystalline-Si_<1-x>Ge_x Gate Grown by Ultra-High Vacuum Chemical Vapor Deposition System

スポンサーリンク

概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1999-10-01

著者

• Chang Chun

  Department Of Electronics Engineering National Chiao Tung University

• Chang C‐y

  Department Of Electronics Engineering National Chiao Tung University

• Huang Guo-wei

  National Nano Device Laboratories

• Huang Guo‐wei

  National Nano Device Laboratories

• CHANG Chun-Yen

  Department of Electronics Engineering, National Chiao Tung University

• CHANG Chun-Yen

  National Nano Device Laboratories

• Chien C‐h

  Department Of Electronics Engineering And Institute Of Electronics National Chiao Tung University

• Chang Chun-yen

  Department Of The Electro-optical Engineering National Chiao Tung University

• CHEN Kun-Ming

  National Nano Device Laboratories

• CHEN Liang-Po

  National Nano Device Laboratory

• Chen L‐p

  National Nano Device Laboratories

• CHEN Kun-Ming

  Department of Electronics Engineering & Institute of Electronics, National Chiao Tung University

• HUANG Hsiang-Jen

  Department of Electronics Engineering & Institute of Electronics, National Chiao Tung University

• Chang Chun‐yen

  Institute Of Electronics National Chiao Tung University

• Chang Chun-yen

  Department Of Electronics Engineering & Institute Of Electronics National Chiao Tung Uiversity

• Chen Liang-po

  National Nano Device Laboratories

• Huang G‐w

  National Nano Device Laboratories

• Chen Kun‐ming

  National Nano Device Laboratories

• Chang C‐y

  Department Of Electronics Engineering Nation Chiao Tung University

• Huang Hsiang-jen

  Department Of Electronics Engineering & Institute Of Electronics National Chiao Tung University

関連論文

• A New Method to Extract MOSFET Threshold Voltage, Effective Channel Length, and Channel Mobility Using S-parameter Measurement(Active Devices and Circuits)(Advances in Characterization and Measurement Technologies for Microwave and Millim
• Investigation of the Indium Atom Interdiffusion on the Growth of GaN/InGaN Heterostructures
• Analysis of Temperature Effects on the High-Frequency Characteristics of RF LDMOS Transistors
• Characterization of RF LDMOS Transistors with Different Layout Structures
• Degradation of Low-Frequency Noise in Partially Depleted Silicon-on-Insulator Metal Oxide Semiconductor Field-Effect Transistors by Hot-Carrier Stress
• Degradation of Low-Frequency Noise in PD SOI MOSFETs after Hot-Carrier Stress
• Low-Frequency Noise in Partially Depleted SOI MOSFETs Operating from Linear Region to Saturation Region at Various Temperatures
• Antenna Charging Effects on the Electrical Characteristics of Polysilicon Gate during Electron Cyclotron Resonance Etching
• Effects of Polysilicon Electron Cyclotron Resonance Etching on Electrical Characteristics of Gate Oxides
• High-Power-Density and High-Efficiency Atomic-Planar-Doped AlGaAs/InGaAs Quantum-Well Power High-Electron-Mobility Transistors for 2.4 V Medium-Power Wireless Communication Applications
• A Simple Fabrication Process of T-Shaped Gates Using a Deep-UV/Electron-Beam/Deep-UV : Tri-Layer Resist System and Electron-Beam Lithography
• A High-Power-Density and High-Efficiency Atomic-Planar-Doped AlGaAs/InGaAs Quantum-Well HEMT for 2.4V Medium-Power Wireless Communication Applications
• TiWN Schottky Contacts to n-Ga_In_P
• The Impact of Mixed-mode Electrical Stress on High-Frequency and RF Power Characteristics of SiGe HBTs
• Impact of Thermal Stability on the Characteristics of Complementary Metal Oxide Semiconductor Transistors with TiN Metal Gate
• Plasma-Process-Induced Damage in Sputtered TiN Metal-Gate Capacitors with Ultrathin Nitrided Oxides
• The Combined Effects of Nitrogen Implantation at S/D Extension and N_2O Oxide on 0.18μm N- and P-Metal Oxide Field Effect Transistors (MOSEETs)
• The Effects of Shallow Germanium Halo Doping on N-Channel Metal Oxide Semiconductor Field Effect Transistors
• The Role of a Resist During O_2 Plasma Ashing and Its Impact on the Reliability Evaluation of Ultrathin Gate Oxides
• Characterization of Antenna Effect by Nondestructive Gate Current Measurement
• Temperature Influence on the Generalized Einstein Relation for Degenerate Semiconductors with Arbitrary Band Structures
• Effect of Interfacial Oxide on Static and High-Frequency Performance in Poly-Emitter Bipolar Transistors Under High-Level Injection
• Effect of Ge Concentration on Static and Microwave Performances in Ge_xSi_ Heterojunction Bipolar Transistors under High-Level Injection
• Effects of Rapid Thermal Annealing on Si Delta-Doped GaInP Grown by Low Pressure Metalorganic Chemical Vapor Deposition
• Silicon Delta Doping of GaInP Grown by Low-Pressure Metalorganic Chemical Vapor Deposition
• A 5.2GHz 47dB Image Rejection Double Quadrature Gilbert Downconverter Using 0.35μm SiGe HBT Technology(Analog Circuit Techniques and Related Topics)
• A 5.7 GHz Gilbert Upconversion Mixer with an LC Current Combiner Output Using 0.35μm SiGe HBT Technology(RF, Analog Circuit and Device Technologies)
• Noise Parameters Computation of Microwave Devices Using Genetic Algorithms(Active Circuits & Antenna, Recent Technologies of Microwave and Millimeter-Wave Devices Focusing on Miniaturization and Advancement in Performance with Their Appli
• A Novel Approach for Parameter Determination of HBT Small-Signal Equivalent Circuit(Model, Analog Circuit and Device Technologies)
• CMOS RFIC : Application to Wireless Transceiver Design (Special Issue on Low-Power High-Speed CMOS LSI Technologies)
• P-Channel Metal Oxide Semiconductor Field Effect Transistors with Polycrystalline-Si_Ge_x Gate Grown by Ultra-High Vacuum Chemical Vapor Deposition System
• Direct Oxidation of Si_Ge_x Layers Using Vacuum-Ultra-Violet Light Radiation in Oxygen
• Very High Hole Mobility in P-Type Si/SiGe Modulation-Doped Heterostructures
• Epitaxy of Si_Ge_x by Ultrahigh-Vacuum Chemical Vapor Deposition Using Si_2H_6 and GeH_4
• Characterization of Si/SiGe Strained-Layer Superlattices Grown by an Ultrahigh Vacuum/Chemical Vapor Deposition Technique
• Characterization of Polycrystalline Silicon Thin Film Transistors Fabricated by Ultrahigh-Vacuum Chemical Vapor Deposition and Chemical Mechanical Polishing
• Combination of Chemical Mechanical Polishing and Ultrahigh Vacuum Chemical Vapor Deposition Techniques to Fabricate Polycrystalline Thin Film Transistors
• Low-Temperature Epitaxial Growth of Silicon and Silicon-Germanium Alloy by Ultrahigh-Vacuum Chemical Vapor Deposition
• Dual-Band Mixer Design(RF, Analog Circuit and Device Technologies)
• Characterization of Improved AlGaAs/GaAs Resonant Tunneling Heterostructure Bipolar Transistors
• Improvement of Reliability of Metal-Oxide Semiconductor Field-Effect Transistors with N_2O Nitrided Gate Oxide and N_2O Polysilicon Gate Reoxidation
• A CMOS Low-Noise Amplifier for Ultra Wideband Wireless Applications(Wide Band Systems)
• Interfacial Abruptness in Si/SiGe Heteroepitaxy Grown by Ultrahigh Vacuum Chemical Vapor Deposition
• Electrical Properties of Multiple High-Dose Si Implantation in p-GaN
• Epitaxial Growth of the GaN Film by Remote-Plasma Metalorganic Chemical Vapor Deposition
• Back-Gating Effects on the Ga_In_P/InP/InGaAs High-Electron-Mobility Transistor
• Influence of Metalorganic Sources on the Composition Uniformity of Selectively Grown Ga_XIn_P
• Cation Source Dependence of Ga_In_P Growth Rate by Low-Pressure Metalorganic Chemical Vapor Deposition
• Low-Voltage-Operation High-Power-Density AlGaAs/InGaAs Enhancement-Mode Pseudomorphic High-Electron-Mobility Transistor for Personal Handy-Phone Handset Application : Semiconductors
• Characterization and Reliability of Lightly-Doped-Drain Polysilicon Thin-Film Transistors with Oxide Sidewall Spacer Formed by One-Step Selective Liquid Phase Deposition
• Dimensional Effects on the Drain Current of N-and P-Channel Polycrystalline Silicon Thin Film Transistors
• Excellent Au/Ge/Pd Ohmic Contacts to n-type GaAs Using Mo/Ti as the Diffusion Barrier
• High-Performance Au/Ti/Ge/Pd Ohmic Contacts on n-Type In_Ga_P
• New Polysilicon-Oxide-Nitride-Oxide-Silicon Electrically Erasable Programmable Read-only Memory Device Approach for Eliminating Off-Cell Leakage Current
• Growth of ZnSe Epilayer on Si Using Ge/Ge_xSi_ Buffer Structure
• Effects of O_2- and N_2O-Plasma Treatments on Properties of Plasma-Enhanced-Chemical-Vapor-Deposition Tetraethylorthosilicate Oxide
• Comparison of N_2 and NH_3 Plasma Passivation Effects on Polycrystalline Silicon Thin-Film Transistors
• Optimization of Short Channel Effect With Arsenic Halo Implant through Polysilicon Gate : Semiconductors
• Shallow-Trench Isolation With Raised-Field-Oxide Structure
• The Elimination of Inversion Domains in MBE-GaN Grown Using Low Temperature Nitridation
• Growth of GaN on Si (111) using simultaneous AlN/α-Si_3N_4 buffer structure
• A Study on Bilateral Latch-Up Self-Triggering in Complementary Metal-Oxide-Semiconductor Protection Circuits
• The Behavior of Bilateral Latch-Up Triggering in VLSI Electro Static Discharge Damage Protection Circuits
• Charge Loss Due to AC Program Disturbance Stresses in EPROMs
• Trarnsient and Steady State Carrier Transport under High Field Stressesin SONOS EEPROM Device
• Systematical Study of Reliability Issues in Plasma-Nitrided and Thermally Nitrided Oxides for Advanced Dual-Gate Oxide p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors
• A method for suppressing deep-level emission in ZnSe/Ge/Ge_xSi_/Si structure
• Composite-Channel Metamorphic High Electron Mobility Transistor for Low-Noise and High-Linearity Applications
• New Nanometer T-Gate Fabricated by Thermally Reflowed Resist Technique : Instrumentation, Measurement, and Fabrication Technology
• Pulsed Characteristics of Microwave SiGe Heterojunction Bipolar Transistors Operated at High Collector Voltages
• High-Frequency Characteristics of SiGe Heterojunction Bipolar Transistors under Pulsed-Mode Operation(Active Devices and Circuits)(Advances in Characterization and Measurement Technologies for Microwave and Millimeter-Wave Materials, Devi
• 3D Multi-gate NMOS Mobility Enhancement with High-tensile ILD-SiN_x Stressor
• The Port-to-Port Isolation the Downconversion P-Type Micromixer Using Different N-Well Topologies(Advanced RF Technologies for Compact Wireless Equipment and Mobile Phones)
• The Effect of Selectively and Fully Ion-Implanted Collector on RF Characteristics of BJT Devices(Advanced RF Technologies for Compact Wireless Equipment and Mobile Phones)
• A Cascade Open-Short-Thru (COST) De-Embedding Method for Microwave On-Wafer Characterization and Automatic Measurement(Microelectronic Test Structures)
• Design and Analysis of On-Chip Tapered Transformers for Silicon RFICs
• Investigation of Hot-Carrier Stress Effect on High-Frequency Performance of Laterally Diffused Metal-Oxide-Semiconductor Transistors (Special Issue : Solid State Devices and Materials (1))
• Radio-Frequency Small-Signal and Noise Modeling for Silicon-on-Insulator Dynamic Threshold Voltage Metal–Oxide–Semiconductor Field-Effect Transistors
• Logic 90 nm n-Channel Field Effect Transistor Current and Speed Enhancements Through External Mechanical Package Straining
• A Novel Cost Effective Double Reduced Surface Field Laterally Diffused Metal Oxide Semiconductor Design for Improving Off-State Breakdown Voltage
• Large Area of Ultraviolet GaN-Based Photonic Quasicrystal Laser
• Light Output Enhancement of GaN-Based Light-Emitting Diodes by Optimizing SiO2 Nanorod-Array Depth Patterned Sapphire Substrate
• Analysis of Temperature Effects on High-Frequency Characteristics of RF Lateral-Diffused Metal–Oxide–Semiconductor Transistors
• Radio-Frequency Silicon-on-Insulator Modeling Considering the Neutral-Body Effect
• Double $\delta$-Doped Enhancement-Mode InGaP/AlGaAs/InGaAs Pseudomorphic High Electron Mobility Transistor for Linearity Application
• Composite-Channel Metamorphic High Electron Mobility Transistor for Low-Noise and High-Linearity Applications
• Performance Enhancement by Local Strain in $\langle 110\rangle$ Channel n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors on (111) Substrate
• Characterization of RF Lateral-Diffused Metal–Oxide–Semiconductor Field-Effect Transistors with Different Layout Structures
• Low-Frequency Noise in Partially Depleted SOI MOSFETs Operating from Linear Region to Saturation Region at Various Temperatures
• Growth of High-Quality Ge Epitaxial Layers on Si (100)
• Effect of Mixed-Mode Electrical Stress on High-Frequency and RF Power Characteristics of SiGe Hetero-Junction Bipolar Transistors
• Low-Frequency Noise Characteristics of SiGe p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with High-Compressive Interlayer-Dielectric-SiNx Stressing Layer
• Degradation of Low-Frequency Noise in Partially Depleted Silicon-on-Insulator Metal Oxide Semiconductor Field-Effect Transistors by Hot-Carrier Stress
• Implementation of Surface Acoustic Wave Vapor Sensor Using Complementary Metal–Oxide–Semiconductor Amplifiers
• Systematical Study of Reliability Issues in Plasma-Nitrided and Thermally Nitrided Oxides for Advanced Dual-Gate Oxide p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors
• Characterization of Polycrystalline Silicon Thin Film Transistors Fabricated by Ultrahigh-Vacuum Chemical Vapor Deposition and Chemical Mechanical Polishing
• Design and Analysis of On-Chip Tapered Transformers for Silicon Radio-Frequency Integrated Circuits
• A Monolithic SiGe Heterojunction Bipolar Transistor Gilbert Upconverter with Inductor–Capacitor Current Mirror Load and Lumped-Element Rat-Race Balun
• Cost-Effective and Self-Textured Gallium-Doped Zinc Oxide Front Contacts for Hydrogenated Amorphous Silicon Thin-Film Solar Cells

もっと見る 閉じる

スポンサーリンク