Growth of High-Quality Ge Epitaxial Layers on Si (100)

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概要

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• A method of growing high-quality epitaxial Ge layers on a Si(100) substrate is reported. In this method, a 0.8 μm Si0.1Ge0.9 layer was first grown. Due to the large lattice mismatch between this layer and the Si substrate, many dislocations form near the interface and in the lower part of the Si0.1Ge0.9 layer. A 0.8 μm Si0.05Ge0.95 layer and a 1.0 μm top Ge layer were subsequently grown on the Si0.1Ge0.9 layer. The formed interfaces of Si0.05Ge0.95/Si0.1Ge0.9 and Ge/Si0.05Ge0.95 can bend and terminate the upward-propagated dislocations very effectively. The in situ annealing process was also performed for each individual layer. Experimental results show that the dislocation density in the top Ge layer can be greatly reduced, and the surface is very smooth, while the total thickness of the structure is only 2.6 μm.

• Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
• 2003-05-15

著者

• Chang Chun-yen

  Department Of Electronics Engineering & Institute Of Electronics National Chiao Tung Uiversity

• Luo Guangli

  Microelectronics And Information Systems Research Center

• Yang Tsung-hsi

  Department Of Electronics Engineering Nation Chiao Tung University

• Chang Edward

  Department Of Communications Engineering Yuan Ze University

• Chang Chun-Yen

  Department of Electronics Engineering, National Chiao Tung University, Hsinchu, Taiwan 30050, R.O.C.

• Chao Koung-An

  Department of Physics, Lund University, S-223 62 Lund, Sweden

• Yang Tsung-Hsi

  Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu, Taiwan 30050, R.O.C.

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