Mechanism of Microstructure Evolution for the Cu/Ta/GaAs Structure after Thermal Annealing
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概要
- 論文の詳細を見る
The diffusion behavior and microstructure evolution of Cu/Ta/GaAs multilayers after thermal annealing are investigated and the mechanism is proposed. A thin 30 nm tantalum layer was sputtered as a diffusion barrier to block Ga and As diffusion into the Cu layer. From the results of sheet resistance measurement, X-ray diffraction analysis, Auger electron spectroscopy and transmission electron microscopy, the Cu/Ta films on GaAs were found to be very stable up to 500 °C without Cu migration into GaAs. After annealing at 550 °C, the interfacial mixing of Ta with GaAs substrate occurred, resulting in the formation of TaAs2, and the diffusion of Ga through the Ta layer formed the Cu3Ga phase at the Cu/Ta interface. After annealing at 600 °C, the reaction of GaAs with Ta and Cu formed TaAs and Cu3Ga owing to Ga migration and interfacial instability.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2007-04-15
著者
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Chang Li
Department Of Chemical Engineering National Cheng Kung University
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Chen Chang-you
Department Of Materials Science And Engineering National Chiao Tung University
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Chang Chun-wei
Department Of Industrial Education National Taiwan Normal University
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Lee Huang-ming
Department Of Materials Science And Engineering Microelectronics And Information Systems Research Ce
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Chang Edward
Department Of Communications Engineering Yuan Ze University
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Lee Huang-Ming
Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu, Tawain 300, Republic of China
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Chang Li
Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu, Tawain 300, Republic of China
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Chang Edward
Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu, Tawain 300, Republic of China
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Chen Chang-You
Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu, Tawain 300, Republic of China
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