Growth of Semipolar InN($10\bar{1}3$) on LaAlO3(112) Substrate
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概要
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In this study, we report the growth and characterization of semipolar ($10\bar{1}3$) InN films grown on LaAlO3(112) substrate by metalorganic molecular beam epitaxy. InN films were grown at various substrate temperatures in the range of 465--540 °C. Structural and optical properties of semipolar InN were investigated by high resolution X-ray diffraction, scanning electron microscopy, and photoluminescence measurements. The results show that semipolar ($10\bar{1}3$) InN layers can be grown at 510 °C with the full-width at half maximum of the X-ray rocking curve about 1400 arcsec and electron mobility of 494 cm2 V-1 s-1.
- 2011-04-25
著者
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Wang Wei-lin
Department Of Materials Science And Engineering Feng Chia University
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CHEN Wei-Chun
Department of Industrial Education, National Taiwan Normal University
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Chang Li
Department Of Chemical Engineering National Cheng Kung University
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Ho Yen-Teng
Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 300, Taiwan, R.O.C.
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Tian Jr-Sheng
Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 300, Taiwan, R.O.C.
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Chen Wei-Chun
Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 300, Taiwan, R.O.C.
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Chang Li
Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 300, Taiwan, R.O.C.
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