Extension of HRTEM resolution by semi-blind deconvolution method and Gerchberg-Saxton algorithm : application to grain boundary and interface

スポンサーリンク

概要

• 論文の詳細を見る
• Published for the Japanese Society of Electron Microscopy by Oxford University Pressの論文
• 2001-11-13

著者

• Kai J‐j

  National Tsing‐hua Univ. Hsinchu Twn

• Chen F‐r

  National Tsing‐hua Univ. Hsinchu Twn

• Chen Fu-rong

  Department Of Engineering And System Science National Tsing-hua University

• Chang Li

  Department Of Materials Science And Engineering National Chiao-tung University Hsinchu

• Chang Li

  Department Of Chemical Engineering National Cheng Kung University

• Ichinose Hideki

  Department Of Materials Science Faculty Of Engineering The University Of Tokyo

• Kai Ji-jung

  Department Of Engineering And System Science Center For Electron Microscopy National Tsing-hua Unive

• Ichinose Hideki

  Department Of Materials Science And Engineering Tokyo University

• Chen Fu-rong

  Department Of Engineering And System Science Center For Electron Microscopy National Tsing-hua Unive

関連論文

• Sublattice Reversal in GaAs/Si/GaAs (100) Heterostructures by Molecular Beam Epitaxy
• Solid-State NMR Characterization on the Molecular-Level Homogeneity in Lower Critical Solution Temparature Mixtures of Poly(α-methyl styrene) and Poly(2,6-dimethyl-ρ-phenylene oxide)
• Comparison of Miscibility and Morphology in Two Ternary Blend Systems : Effects of Binary Interactions
• Effect of Hot Isostatic Pressing on Microstructure and Mechanical Properties of CM-681LC Nickel-Base Superalloy Using Microcast
• Structural Disorder and Optical Property of InGaAsN Alloy Semiconductor (小特集テーマ 進展する窒化物半導体光・電子デバイスの現状,及び一般)
• Structural Disorder and Optical Property of InGaAsN Alloy Semiconductor (小特集テーマ:進展する窒化物半導体光・電子デバイスの現状,及び一般)
• Discussion on the Mechanical Behavior of Carbon Nanotube/C60 Composite Based on Observation of Interfacial Structure
• Processing of Ductile Carbon Nanotube/C60 Composite
• Low-Voltage-Operation High-Power-Density AlGaAs/InGaAs Enhancement-Mode Pseudomorphic High-Electron-Mobility Transistor for Personal Handy-Phone Handset Application : Semiconductors
• GaAs/Ge/GaAs Sublattice Reversal Epitaxy on GaAs (100) and (111) Substrates for Nonlinear Optical Devices
• The fabrication and application of Zernike electrostatic phase plate
• Imaging of a single atomic column in silicon grain boundary
• Growth of Semipolar InN($10\bar{1}3$) on LaAlO3(112) Substrate
• Bandgap mapping for III-V quantum well by electron spectroscopy imaging
• Development of a haptic sensor for measuring skin morphological features
• Structure modelling of Σ3 and Σ9 coincident boundaries in CVD diamond thin films
• Transmission Electron Microscopic Observation of Grain Boundaries in CVD Diamond Thin Films
• Miscibility, Morphology, and Thermal Characterization of an Acrylic/Styrenic Blend System. Poly(cyclohexyl methacrylate) and Poly (α-methyl styrene)
• Four-dimensional dielectric property image obtained from electron spectroscopic imaging series
• Extension of HRTEM resolution by semi-blind deconvolution method and Gerchberg-Saxton algorithm : application to grain boundary and interface
• Mapping of sp^2/sp^3 in DLC thin film by signal processed ESI series energy-loss image
• Atomic structure observation of silicon carbide using HRTEM
• Atomic structure observation of silicon carbide using HRTEM
• Chemical Precursor for the Synthesis of Diamond Films at Low Temperature
• ARHVTEM of the Pd/ZnO heterointerface chemical structure
• A Modified Wheeler Model to Improve Predictions of Crack Growth Following a Single Overload
• Electron Emission Properties of Nitrogen-Induced Localized Defects in InAsN/GaAs Quantum Dots
• Study of Titanium Tungsten Nitride and Tungsten Nitride Schottky Contacts on n-GaN
• Mechanism of Microstructure Evolution for the Cu/Ta/GaAs Structure after Thermal Annealing
• Effect of Growth Temperature on Formation of Amorphous Nitride Interlayer between AlN and Si(111)
• Effect of Growth Temperature on Formation of Amorphous Nitride Interlayer between AlN and Si(111) (Special Issue : Recent Advances in Nitride Semiconductors)

もっと見る 閉じる

スポンサーリンク