A Modified Wheeler Model to Improve Predictions of Crack Growth Following a Single Overload
スポンサーリンク
概要
- 論文の詳細を見る
This paper modifies the Wheeler retardation concept to improve the accuracy of crack growth predictions after a single overload. This modification is primarily based on the number of delay cycles, N_d, and on the overload affected crack length, a_d. N_d is used to calibrate the Wheeler exponent, m, and a_d is employed to assess the effective overload plastic zone size. In addition, the regression equations for m and a_d are established in terms of the overload ratio OLR. The modified Wheeler model together with these equations performed well in reproduction of the actual crack growth behavior in 5083-O aluminum alloy. All predictions of the number of delay cycles were within a factor of 1.1 of the experimental observations.
- 一般社団法人日本機械学会の論文
- 2001-01-15
著者
-
Chang Li
Department Of Chemical Engineering National Cheng Kung University
-
Sheu Bor-chiou
Department Of Applied Physics Chung-cheng Institute Of Technology
-
Sheu Borchiou
Department Of System Engineering Chung Cheng Institute Of Technology
-
SONG PeyShiuan
Department of Civil Engineering, Dahan Institute of Technology
-
Song Peyshiuan
Department Of Civil Engineering Dahan Institute Of Technology
-
Song Pey-Shiuan
Department of Civil Engineering, Dahan Institute of Technology
関連論文
- Solid-State NMR Characterization on the Molecular-Level Homogeneity in Lower Critical Solution Temparature Mixtures of Poly(α-methyl styrene) and Poly(2,6-dimethyl-ρ-phenylene oxide)
- Comparison of Miscibility and Morphology in Two Ternary Blend Systems : Effects of Binary Interactions
- Effect of Hot Isostatic Pressing on Microstructure and Mechanical Properties of CM-681LC Nickel-Base Superalloy Using Microcast
- Low-Voltage-Operation High-Power-Density AlGaAs/InGaAs Enhancement-Mode Pseudomorphic High-Electron-Mobility Transistor for Personal Handy-Phone Handset Application : Semiconductors
- Growth of Semipolar InN($10\bar{1}3$) on LaAlO3(112) Substrate
- Bandgap mapping for III-V quantum well by electron spectroscopy imaging
- Miscibility, Morphology, and Thermal Characterization of an Acrylic/Styrenic Blend System. Poly(cyclohexyl methacrylate) and Poly (α-methyl styrene)
- Four-dimensional dielectric property image obtained from electron spectroscopic imaging series
- Extension of HRTEM resolution by semi-blind deconvolution method and Gerchberg-Saxton algorithm : application to grain boundary and interface
- Chemical Precursor for the Synthesis of Diamond Films at Low Temperature
- Visible Photoluminescence from Si^+-Implanted SiO_2 Films after High-Temperature Rapid Thermal Annealing
- A Modified Wheeler Model to Improve Predictions of Crack Growth Following a Single Overload
- Electron Emission Properties of Nitrogen-Induced Localized Defects in InAsN/GaAs Quantum Dots
- Study of Titanium Tungsten Nitride and Tungsten Nitride Schottky Contacts on n-GaN
- Mechanism of Microstructure Evolution for the Cu/Ta/GaAs Structure after Thermal Annealing
- Effect of Growth Temperature on Formation of Amorphous Nitride Interlayer between AlN and Si(111)
- Effect of Growth Temperature on Formation of Amorphous Nitride Interlayer between AlN and Si(111) (Special Issue : Recent Advances in Nitride Semiconductors)