Visible Photoluminescence from Si^+-Implanted SiO_2 Films after High-Temperature Rapid Thermal Annealing

スポンサーリンク

概要

• 論文の詳細を見る

• Two photoluminescence(PL)bands were observed in 4 × 10^<15>cm^<-2>-fluence-Si^+-implanted 100-nm-thick SiO_2 films after rapid thermal annealing(RTA)at 950-1150℃ with 2-4eV excitation. The PL band at 2.2eV was excited by 3.8eV photons in the films after RTA in dry nitrogen while the other band at 1.9 eV was excited by 2.5 eV photons in the films after isochronal RTA in wet nitrogen. Moreover, the origin for the 2.2 eV energy band was found to be the same as that of the E'_δ center. The origin of the 1.9 eV band could be ascribed to the non-bridging oxygen hole centers(NBOHC). The latter was more stable even at high temperatures and showed a stronger PL intensity than the former.

• 社団法人応用物理学会の論文
• 2000-02-01

著者

• Tsai Jen-hwan

  Department Of Mathematics And Physics Chinese Air Force Academy

• Tsai Jen-hwan

  Department Of Applied Physics Chung-cheng Institute Of Technology

• Yu Ann-ting

  Department Of Mathematics And Physics Chinese Air Force Academy

• SHEU Bor-Chiou

  Department of Applied Physics, Chung-Cheng Institute of Technology

• Sheu Bor-chiou

  Department Of Applied Physics Chung-cheng Institute Of Technology

関連論文

• Effects of a Metal Film and Prism Dielectric on Properties of Surface Plasmon Resonance in a Multilayer System
• Visible Photoluminescence from Si^+-Implanted SiO_2 Films after High-Temperature Rapid Thermal Annealing
• Dielectric and Piezoelectric Characteristics in Lead-Free Li[x](K.Na.)x(Nb.Ta.)O Piezoelectric Ceramics Prepared by Two-Step Calcination Method (Special Issue : Advanced Electromaterials)
• A Modified Wheeler Model to Improve Predictions of Crack Growth Following a Single Overload
• Photoluminescence Mechanisms in Si+-Implanted Dry SiO2 Films after Rapid Thermal Annealing at Dissociation Temperature of a-SiO2 Phase Variance

スポンサーリンク