Photoluminescence Mechanisms in Si+-Implanted Dry SiO2 Films after Rapid Thermal Annealing at Dissociation Temperature of a-SiO2 Phase Variance

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概要

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• Photoluminescence (PL) mechanisms in Si+-implanted dry SiO2 films after rapid thermal annealing (RTA) at the dissociation temperature of a-SiO2 phase variance are further investigated. Two PL mechanisms are found in Si+-implanted 100-nm-thick dry SiO2 films after RTA at 1050°C in 50 mbar wet and dry nitrogen, respectively. They both increased with an increase in the fluence of silicon implantation from $4\times 10^{14}$ cm-2 to $4\times 10^{15}$ cm-2. Furthermore, the mechanism in the films after RTA at 1050°C in 50 mbar wet nitrogen tended to disappear when 50 nm of the top layer was etched from the as-implanted $4\times 10^{15}$ cm-2 100-nm-thick SiO2 film before RTA. However, the other mechanism in the films after isochronal RTA in dry nitrogen increased with decreasing residual film thickness to a value of 50 nm. Lastly, the mechanism in wet-N2-annealed as-implanted dry SiO2 films, increasing with an increase in water flow rate in the RTA process and being not ascribed to an oxygen-deficient structure, was attributed to a hydrogen-related structure because of the presence of Si–O–H structures even after reannealing at 850°C for ${<}30$ min, which was consistent with the non-bridging oxygen hole centers (NBOHC). The other mechanism in dry-N2-annealed as-implanted dry SiO2 films, independent of the nitrogen flow rate, attributed to oxygen- and hydrogen-deficient structures, and disappeared after heating to 600°C, was similar to that of the E$'_{\delta}$ center.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2005-03-15

著者

• Tsai Jen-hwan

  Department Of Applied Physics Chung-cheng Institute Of Technology

• Yu Ann-ting

  Department Of Mathematics And Physics Chinese Air Force Academy

• Yu Ann-Ting

  Department of Mathematics and Physics, General Education Center, Chinese Air Force Academy, Kangshan, Kaohsiung 820, Taiwan, R.O.C

• Tsai Jen-Hwan

  Department of Mathematics and Physics, General Education Center, Chinese Air Force Academy, Kangshan, Kaohsiung 820, Taiwan, R.O.C

関連論文

• Effects of a Metal Film and Prism Dielectric on Properties of Surface Plasmon Resonance in a Multilayer System
• Visible Photoluminescence from Si^+-Implanted SiO_2 Films after High-Temperature Rapid Thermal Annealing
• Dielectric and Piezoelectric Characteristics in Lead-Free Li[x](K.Na.)x(Nb.Ta.)O Piezoelectric Ceramics Prepared by Two-Step Calcination Method (Special Issue : Advanced Electromaterials)
• Photoluminescence Mechanisms in Si+-Implanted Dry SiO2 Films after Rapid Thermal Annealing at Dissociation Temperature of a-SiO2 Phase Variance

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