Study of Titanium Tungsten Nitride and Tungsten Nitride Schottky Contacts on n-GaN
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概要
- 論文の詳細を見る
The Schottky diode behaviors of the TiWNx and the WNx Schottky contacts to n-GaN were investigated at different annealing temperatures. Both TiWNx and WNx films were deposited by the reactive DC sputtering method. The WNx/n-GaN contact exhibited excellent electrical characteristics even after rapid-thermal annealing up to 850°C for 10 s. The ideality factor and barrier height remained 1.09 and 0.80 eV, respectively, after 850°C annealing. However, the TiWNx/n-GaN contact was thermally stable only up to 650°C annealing; the values of the ideality factor and the barrier height were 1.14 and 0.76 eV, respectively, after 650°C annealing and started to degrade when annealed at higher temperatures. The deterioration of the TiWNx/n-GaN contact at higher temperatures was due to the inter-diffusion of the TiWN film and the GaN material.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-07-15
著者
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Fang Chao-yi
Department Of Materials Science And Engineering And Microelectronics And Information System Research
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Huang Jian-sheng
Department Of Materials Science And Engineering And Microelectronics And Information System Research
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Lee Cheng-shih
Department Of Materials Science And Engineering National Chiao Tung University
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Huang Yao-lin
Department Of Materials Science And Engineering And Microelectronics And Information System Research
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Chang Li
Department Of Chemical Engineering National Cheng Kung University
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Chang Edward-yi
Department Of Materials Science And Engineering And Microelectronics And Information System Research
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Chang Edward-Yi
Department of Materials Science and Engineering, and Microelectronics and Information System Research Center, National Chiao Tung University, 1001 Ta Hsueh Road, Hsinchu 300, Taiwan, R.O.C.
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Chang Li
Department of Materials Science and Engineering, and Microelectronics and Information System Research Center, National Chiao Tung University, 1001 Ta Hsueh Road, Hsinchu 300, Taiwan, R.O.C.
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Fang Chao-Yi
Department of Materials Science and Engineering, and Microelectronics and Information System Research Center, National Chiao Tung University, 1001 Ta Hsueh Road, Hsinchu 300, Taiwan, R.O.C.
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Huang Yao-Lin
Department of Materials Science and Engineering, and Microelectronics and Information System Research Center, National Chiao Tung University, 1001 Ta Hsueh Road, Hsinchu 300, Taiwan, R.O.C.
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Lee Cheng-Shih
Department of Materials Science and Engineering, and Microelectronics and Information System Research Center, National Chiao Tung University, 1001 Ta Hsueh Road, Hsinchu 300, Taiwan, R.O.C.
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