Structural Disorder and Optical Property of InGaAsN Alloy Semiconductor (小特集テーマ 進展する窒化物半導体光・電子デバイスの現状,及び一般)

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概要

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• The 250-500 nm-thick LnGaAsN (In = 17.0%, N= 0-2.3%) alloy films were grown on GaAs(001) substrates by metalorganic vapor phase epitaxy (MOVPE) at 600℃ with dimethylhydrazine as the N precursor. Low-temperature (11K) and room temperature photoluminescence (PL) spectra showed a continuous red-shift with increasing N content (0-2.3%). The temperature dependence of the PL spectra is excellent with a near-band-edge emission peak for low N contents (<2.3%). Additionally, the carrier/exciton localization induced by alloy disorders in the microscopic structure was observed. On the other hand, the film with high N content (2.3%) showed that the dominant spectra contain several broad PL bands of unknown origin, in addition to the InGaAsN-related emission. The different luminescence emissions, which corresponded the In- and N-related localization, from the different regions of the In_0.17Ga_0 .83As_0.977N_0.023 alloy film were also observed. Furthermore, from transmission electron microscope images, the nearly defecting free InGaAsN layer was obtained for the films with low N content (1.0%). In contrast, for the films with higher N content (2.3%), the formation of structural defects was clearly observed. Our results suggest that the compositional fluctuation of both In and N, which is responsible for the formation of structural defects as well as for the carrier/exciton localization, increases with increasing N concentration.

• 社団法人電子情報通信学会の論文
• 2002-06-07

著者

• Onabe Kentaro

  Department Of Applied Physics The University Of Tokyo

• SHIRAKI Yasuhiro

  Department of Applied Physics, The University of Tokyo

• Oki K

  Department Of Materials Science And Technology Graduate School Of Engineering Sciences Kyushu Univer

• SANORPIM Sakuntam

  Department of Advanced Materials Science, The University of Tokyo

• Nakajima Fumihiro

  Department of Advanced Materials Science, The University of Tokyo

• IMURA Shigeyuki

  Department of Advanced Materials Science, The University of Tokyo

• TAKUMA Eriko

  Department of Materials Science, The University of Tokyo

• KATAYAMA Ryuji

  Department of Applied Physics, The University of Tokyo

• ICHINOSE Hideki

  Department of Materials Science, The University of Tokyo

• Shiraki Yasuhiro

  School Of Fundamental Science And Technology Keio University

• Shiraki Y

  Research Center For Silicon Nano-science Advanced Research Laboratories Musashi Institute Of Technol

• Takuma E

  Univ. Tokyo Tokyo Jpn

• Takuma Eriko

  Department Of Materials Science School Of Engineering The University Of Tokyo

• Imura Shigeyuki

  Department Of Advanced Materials Science The University Of Tokyo

• Ichinose H

  Univ. Tokyo Tokyo Jpn

• Shiraki Yasuhiro

  Department Of Applied Physics And Physico-informatics Keio University

• Onabe K

  Department Of Advanced Materials Science The University Of Tokyo:department Of Applied Physics The U

• Ichinose Hideki

  Department Of Materials Science Faculty Of Engineering The University Of Tokyo

• Katayama Ryuji

  Department Of Applied Physics The University Of Tokyo

• Ichinose Hideki

  Department Of Materials Science And Engineering Tokyo University

• Nakajima Fumihiro

  Department Of Advanced Materials Science The University Of Tokyo

• Sanorpim Sakuntam

  Department Of Advanced Materials Science The University Of Tokyo:department Of Applied Physics The U

• Onabe Kentaro

  Department of Advanced Materials Science, Graduate School of Frontier Sciences, The University of Tokyo, Kashiwa, Chiba 277-8561, Japan

• Katayama Ryuji

  Department of Advanced Materials Science, Graduate School of Frontier Sciences, The University of Tokyo, Kashiwa, Chiba 277-8561, Japan

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