Lattice-Latching Effect in Metalorganic Vapor Phase Epitaxy Growth of InGaAsN Film Lattice-Matched to Bulk InGaAs Substrate
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概要
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The effects of lattice mismatch between an InzGa1-zAs bulk substrate and an InxGa1-xAs1-yNy epilayer on the incorporation kinetics of N ($y$) and In ($x$) were investigated. Compositions $(x,y)$ were revealed to be pinned by the substrate to those satisfying lattice-matching conditions. With decreasing In ($z$) content in the substrate, the incorporation of N is spontaneously enhanced. On the other hand, the In content of the layer is reduced to decrese the deformation energy due to the lattice mismatch. On the basis of our results, thick InxGa1-xAs1-yNy ($0.289 < x < 0.312$ and $0.009 < y < 0.014$) layers exhibiting photoluminescence in the wavelength range of 1.3–1.55 μm were observed to grow owing to the “lattice-latching” effect.
- 2010-04-25
著者
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Sanorpim Sakuntam
Department Of Advanced Materials Science The University Of Tokyo:department Of Applied Physics The U
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Kentaro Onabe
Department of Advanced Materials Science, The University of Tokyo, Kashiwa, Chiba 277-8561, Japan
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Onabe Kentaro
Department of Advanced Materials Science, Graduate School of Frontier Sciences, The University of Tokyo, Kashiwa, Chiba 277-8561, Japan
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Ryuji Katayama
Department of Advanced Materials Science, The University of Tokyo, Kashiwa, Chiba 277-8561, Japan
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Katayama Ryuji
Department of Advanced Materials Science, Graduate School of Frontier Sciences, The University of Tokyo, Kashiwa, Chiba 277-8561, Japan
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Noritaka Usami
Institute for Materials Research (IMR), Tohoku University, Sendai 980-8577, Japan
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Sakuntam Sanorpim
Department of Physics, Faculty of Science, Chulalongkorn University, Bangkok 10330, Thailand
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Kazuo Nakajima
Institute for Materials Research (IMR), Tohoku University, Sendai 980-8577, Japan
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