Quantitative Evaluation of Silicon Displacement Induced by Arsenic Implantation Using Silicon Isotope Superlattices
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概要
- 論文の詳細を見る
- Japan Society of Applied Physicsの論文
- 2008-02-25
著者
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ITOH Kohei
Department of Applied Physics and Physico-Informatics, Keio University
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SAWANO Kentarou
Research Center for Silicon Nano-Science, Advanced Research Laboratories, Tokyo City University
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SHIRAKI Yasuhiro
Research Center for Advanced Science and Technology (RCAST), The University of Tokyo
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Itoh Kohei
Keio Univ. Yokohama Jpn
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Itoh Kohei
Department Of Applied Physics And Physico-informatics And Crest-jst Keio University
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Sawano Kentarou
Research Center For Silicon Nano-science Advanced Research Laboratories Musashi Institute Of Technol
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SHIMIZU Yasuo
Department of Second Internal Medicine, Nagoya University School of Medicine
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Shiraki Yasuhiro
School Of Fundamental Science And Technology Keio University
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UEMATSU Masashi
Department of Applied Physics and Physico-Informatics, Keio University
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TAKANO Akio
NTT Advanced Technology Corporation
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Uematsu Masashi
School Of Fundamental Science And Technology Keio University
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Shimizu Yasuo
Department Of Endoscopy And Endoscopic Surgery Gunma University Hospital
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Shiraki Yasuhiro
Department Of Applied Physics And Physico-informatics Keio University
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Sawano Kentarou
Tokyo City Univ. Tokyo Jpn
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Shimizu Yasuo
Department 4 Technology Research Division 2 Honda R&d Co. Ltd. Automobile R&d Center
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Shiraki Yasuhiro
Research Center For Advanced Science And Technology (rcast) The University Of Tokyo
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Itoh Kohei
Department of Applied Physics and CREST-JST, Keio University, Yokohama 223-8522, Japan
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