Effect of Si/SiO2 Interface on Silicon and Boron Diffusion in Thermally Grown SiO2
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概要
- 論文の詳細を見る
Silicon self-diffusion and boron diffusion in SiO2 were investigated as functions of the distance of diffusing silicon from the Si/SiO2 interface at various temperatures in the range of 1150–1250°C using natSiO2/28SiO2 isotope heterostructures and 30Si- and B-implanted 28SiO2 without and with a 30-nm-thick silicon nitride layer on the surface of each sample. The self-diffusivity of Si in SiO2 did not depend on the oxygen concentration in the annealing ambient without the silicon nitride layer. The diffusion profiles of Si and B in the sample capped with the silicon nitride layer became broader as the distance from the Si/SiO2 interface decreased. This dependence on the distance from the interface was caused by SiO molecules, which are generated at the interface and diffuse into SiO2. The simulated results, taking into account the role of SiO molecules, showed good agreement with each experimental profile of 30Si and B.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-11-15
著者
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Itoh Kohei
Department Of Applied Physics And Physico-informatics And Crest-jst Keio University
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Fukatsu Shigeto
Department Of Applied Physics And Physico-informatics And Crest-jst Keio University
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Kageshima Hiroyuki
Ntt Basic Research Laboratories
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Uematsu Masashi
Ntt Basic Research Laboratories
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Shiraishi Kenji
Institute Of Physics University Of Tsukuba
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Takahashi Yasuo
Ntt Basic Research Laboratories Ntt Corporation
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Kageshima Hiroyuki
NTT Basic Research Laboratories, NTT Corporation, Atsugi 243-0198, Japan
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Uematsu Masashi
NTT Basic Research Laboratories, NTT Corporation, Atsugi 243-0198, Japan
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Shiraishi Kenji
Institute of Physics, University of Tsukuba, Tsukuba 305-8571, Japan
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Itoh Kohei
Department of Applied Physics and CREST-JST, Keio University, Yokohama 223-8522, Japan
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