High Purity Isotopically Enriched 29Si and 30Si Single Crystals: Isotope Separation, Purification, and Growth
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概要
- 論文の詳細を見る
We report the successful isotope separation and bulk single crystal growth of 29Si and 30Si stable isotopes. The isotopic enrichments of the 29Si and 30Si single crystals determined by mass spectrometry are 99.23% and 99.74%, respectively. Both crystals have the electrically active net-impurity concentration less than $10^{15}$ cm-3. Thanks to the result of this work and the 28Si crystals we grew previously, high quality single crystals of every stable Si isotope (28Si, 29Si, and 30Si) have been made available for a wide variety of basic research and industrial applications.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-10-15
著者
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Riemann Helge
Institut Fur Kristallzuchtung
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Itoh Kohei
Department Of Applied Physics And Physico-informatics And Crest-jst Keio University
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Kovalev Igor
Institute Of Chemistry Of High-pure Substances Of The Ras
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KATO Jiro
Department of Applied Physics and Physico-Informatics, CREST-JST, Keio University
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KALITEEVSKII Alexey
Science and Technical Center "Centrotech-ECP"Electrochemical Plant
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GODISOV Oleg
Science and Technical Center "Centrotech-ECP"Electrochemical Plant
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DEVYATYCH Grigori
Institute of Chemistry of High-Pure Substances of the RAS
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BULANOV Andrey
Institute of Chemistry of High-Pure Substances of the RAS
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GUSEV Anatoli
Institute of Chemistry of High-Pure Substances of the RAS
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SENNIKOV Pyotr
Institute of Chemistry of High-Pure Substances of the RAS
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POHL Hans-J.
VITCON Projectconsult GmbH
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ABROSIMOV Nikolai
Institute of Crystal Growth
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Uemura Masafumi
Department Of Applied Physics And Physico-informatics Crest-jst Keio University
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Bulanov Andrey
Institute of Chemistry of High-Pure Substances of the RAS, Tropinin-Str. 49, Nizhny Novgorod 603600, Russian Federation
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Devyatych Grigori
Institute of Chemistry of High-Pure Substances of the RAS, Tropinin-Str. 49, Nizhny Novgorod 603600, Russian Federation
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Pohl Hans-J.
VITCON Projectconsult GmbH, Dornbluthweg 5, Jena D-07743, Germany
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Riemann Helge
Institute of Crystal Growth, Max-Born-Str. 2, Berlin D-12489, Germany
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Abrosimov Nikolai
Institute of Crystal Growth, Max-Born-Str. 2, Berlin D-12489, Germany
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Kato Jiro
Department of Applied Physics and Physico-Informatics, CREST-JST, Keio University, 3-14-1, Yokohama 223-8522, Japan
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Godisov Oleg
Science and Technical Center "Centrotech-ECP" Electrochemical Plant, Krasnogvardeyskaya Sq, 3, Saint Petersburg 195272, Russian Federation
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Kovalev Igor
Institute of Chemistry of High-Pure Substances of the RAS, Tropinin-Str. 49, Nizhny Novgorod 603600, Russian Federation
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Kaliteevskii Alexey
Science and Technical Center "Centrotech-ECP" Electrochemical Plant, Krasnogvardeyskaya Sq, 3, Saint Petersburg 195272, Russian Federation
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Uemura Masafumi
Department of Applied Physics and Physico-Informatics, CREST-JST, Keio University, 3-14-1, Yokohama 223-8522, Japan
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Gusev Anatoli
Institute of Chemistry of High-Pure Substances of the RAS, Tropinin-Str. 49, Nizhny Novgorod 603600, Russian Federation
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Itoh Kohei
Department of Applied Physics and Physico-Informatics, CREST-JST, Keio University, 3-14-1, Yokohama 223-8522, Japan
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Itoh Kohei
Department of Applied Physics and CREST-JST, Keio University, Yokohama 223-8522, Japan
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